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MBE-grown Zincblende MnSe1−xTex Thin Films on ZnTe Journal article
Journal of Crystal Growth, 2019,Volume: 511,Page: 19-24
Authors:  Man Kit Cheng;  Jing Liang;  Jian Xu;  Ying Hoi Lai;  Sut Kam Ho;  Kam Weng Tam;  Iam Keong Sou
Favorite |  | TC[WOS]:1 TC[Scopus]:1 | Submit date:2019/03/01
A1. High Resolution X-ray Diffraction  A3. Molecular Beam Epitaxy  B1. Alloys  B1. Tellurites  
Growth and characterization of pure, Se and As doped ZTS crystals Journal article
JOURNAL OF CRYSTAL GROWTH, 2018,Volume: 498,Page: 357-361
Authors:  Huajian Yu;  Yuanyuan Zhang;  Xianshun Lv;  Lei Wei;  Jianhua Xu;  Xuping Wang;  Bing Liu;  Huadi Zhang;  Cong Zhang;  Qinggang Li
Favorite |  | TC[WOS]:3 TC[Scopus]:4 | Submit date:2020/03/11
Synthesis of large optically clear SAPO-47 single crystals using n-propylamine as template Journal article
Journal of Crystal Growth, 2015,Volume: 426,Page: 123-128
Authors:  Xu X.T.;  Zhai J.P.;  Chen Y.P.;  Li I.L.;  Ruan S.C.;  Tang Z.K.
Favorite |  | TC[WOS]:3 TC[Scopus]:4 | Submit date:2019/04/08
n-Propylamine  One-step temperature process  SAPO-47  Single crystals  
Synthesis of large single crystals of AlPO-LTA by using n-Propylamine as structure directing agent Journal article
Journal of Crystal Growth, 2014,Volume: 407,Page: 1-5
Authors:  Xu X.T.;  Zhai J.P.;  Chen Y.P.;  Li I.L.;  Chen H.Y.;  Ruan S.C.;  Tang Z.K.
Favorite |  | TC[WOS]:8 TC[Scopus]:9 | Submit date:2019/04/08
A1. Crystal morphology  A2. Hydrothermal crystal growth  A2. Single crystal growth  B1. Phosphates  
Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays Journal article
Journal of Crystal Growth, 2014,Volume: 405,Page: 81-86
Authors:  Li Q.;  Ng K.W.;  Tang C.W.;  Lau K.M.;  Hill R.;  Vert A.
Favorite |  | TC[WOS]:19 TC[Scopus]:22 | Submit date:2019/04/08
A1. Defects  A3. Metal-organic chemical vapor deposition  B1. Nanomaterials  B2. Semiconducting III-V materials  B2. Semiconducting indium phosphide  
Degenerated MgZnO films obtained by excessive zinc Journal article
Journal of Crystal Growth, 2012,Volume: 347,Issue: 1,Page: 95-98
Authors:  Liu J.S.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang Z.Z.;  Shen D.Z.
Favorite |  | TC[WOS]:10 TC[Scopus]:10 | Submit date:2019/04/08
A1. Characterization  A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  
A route to single-crystalline ZnO films with low residual electron concentration Journal article
Journal of Crystal Growth, 2010,Volume: 312,Issue: 20,Page: 2861-2864
Authors:  Liu J.S.;  Shan C.X.;  Wang S.P.;  Sun F.;  Yao B.;  Shen D.Z.
Favorite |  | TC[WOS]:10 TC[Scopus]:10 | Submit date:2019/04/08
A1. X-ray diffraction  A3. Molecular beam epitaxy  B1. Zinc compounds  B2. Semiconducting II-VI materials  
A facile route to arsenic-doped p-type ZnO films Journal article
Journal of Crystal Growth, 2009,Volume: 311,Issue: 14,Page: 3577-3580
Authors:  Wang S.P.;  Shan C.X.;  Li B.H.;  Zhang J.Y.;  Yao B.;  Shen D.Z.;  Fan X.W.
Favorite |  | TC[WOS]:17 TC[Scopus]:18 | Submit date:2019/04/08
A1. Diffusion  A1. Doping  A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  
Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 373-377
Authors:  Lu Y.M.;  Wang X.;  Zhang Z.Z.;  Shen D.Z.;  Su S.C.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
Favorite |  | TC[WOS]:20 TC[Scopus]:22 | Submit date:2019/04/08
A1. Atomic force microscopy  A1. Photoluminescence  A1. X-ray diffraction  A3. Molecular beam epitaxy  B1. Zinc oxide  
p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 362-365
Authors:  Zhang Z.Z.;  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Yao B.;  Li B.H.;  Zhao D.X.;  Zhang J.Y.;  Fan X.W.;  Tang Z.K.
Favorite |  | TC[WOS]:27 TC[Scopus]:28 | Submit date:2019/04/08
A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  B3. Light-emitting diodes