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A 2-μ InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power Journal article
IEEE Transactions on Microwave Theory and Techniques, 2016,Volume: 64,Issue: 1,Page: 200-209
Authors:  Jagadheswaran,U. R.;  Ramiah,Harikrishnan;  Mak,Pui In;  Martins,Rui P.
Favorite |  | TC[WOS]:15 TC[Scopus]:18 | Submit date:2021/03/09
Adjacent channel leakage ratio (ACLR)  Error vector magnitude (EVM)  Gallium-arsenide (GaAs)  Long-term evolution (LTE)  Power amplifier (PA)  Power-added efficiency (PAE)  Quadrature amplitude modulation (QAM)