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Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO 2 Film Journal article
ACS Applied Materials and Interfaces, 2016,Volume: 8,Issue: 48,Page: 32971-32977
Authors:  Fan L.;  Chen Y.;  Liu Q.;  Chen S.;  Zhu L.;  Meng Q.;  Wang B.;  Zhang Q.;  Ren H.;  Zou C.
Favorite |  | TC[WOS]:39 TC[Scopus]:41 | Submit date:2019/04/08
infrared transmission  memory device  n-GaN  phase transition modulation  vanadium dioxide  
Progress on preparation of InAs nanowires by molecular beam epitaxy Conference paper
Materials Science Forum
Authors:  Li R.-X.;  Tang J.-L.;  Fang D.;  Wang S.-P.;  Zhao H.-F.;  Fang X.;  Wei Z.-P.;  Jia H.-M.;  Wang X.-H.;  Ma X.-H.
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Applications  Growth  InAs nanowires  MBE  
Controllable growth of high quality ZnO thin film on C-sapphire Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2015,Volume: 36,Issue: 10,Page: 1171-1177
Authors:  Zhang Q.-L.;  Su L.-X.;  Wu T.-Z.;  Wang Y.-C.;  Zhu Y.;  Chen M.-M.;  Gui X.-C.;  Tang Z.-K.
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Buffer  Defects  High quality thin film  Stress  ZnO  
Growth of ZnO single crystal and BeZnO alloy and ultraviolet detector Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2015,Volume: 36,Issue: 11,Page: 1233-1239
Authors:  Wang Y.-C.;  Zhang Q.-L.;  Su L.-X.;  Shen Z.-C.;  Wu T.-Z.;  Tang Z.-K.
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BexZn1-xO alloy  MBE  Surface treatment  Ultraviolet detector  ZnO single crystal  
High-performance zero-bias ultraviolet photodetector based on p -GaN/ n -ZnO heterojunction Journal article
Applied Physics Letters, 2014,Volume: 105,Issue: 7
Authors:  Su L.;  Zhang Q.;  Wu T.;  Chen M.;  Su Y.;  Zhu Y.;  Xiang R.;  Gui X.;  Tang Z.
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The modulation of grain boundary barrier in ZnMgO/ZnO heterostructure by surface polar liquid Journal article
Scientific Reports, 2014,Volume: 4
Authors:  Ji X.;  Zhu Y.;  Chen M.;  Su L.;  Chen A.;  Gui X.;  Xiang R.;  Tang Z.
Favorite |  | TC[WOS]:10 TC[Scopus]:12 | Submit date:2019/04/08
Smooth surface morphology of ZnO thin films on sapphire at low temperature Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 5,Page: 542-547
Authors:  Zhao P.-C.;  Zhang Z.-Z.;  Yao B.;  Li B.-H.;  Wang S.-P.;  Jiang M.-M.;  Zhao D.-X.;  Shan C.-X.;  Zhao H.-F.;  Liu L.;  Shen D.-Z.
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Growth temperature  Molecular beam epitaxy  Smooth growth  ZnO  
Effect of boron on nitrogen doped p-type ZnO thin films Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 7,Page: 795-799
Authors:  Zhao P.-C.;  Zhang Z.-Z.;  Yao B.;  Li B.-H.;  Wang S.-P.;  Jiang M.-M.;  Zhao D.-X.;  Shan C.-X.;  Liu L.;  Shen D.-Z.
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B/N codoped  Stable p-type conduction  ZnO  
p-type doping of ZnO:N thin fims by alternating the growth atmosphere Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 4,Page: 399-403
Authors:  Zhao P.-C.;  Zhang Z.-Z.;  Yao B.;  Li B.-H.;  Wang S.-P.;  Jiang M.-M.;  Zhao D.-X.;  Shan C.-X.;  Liu L.;  Shen D.-Z.
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Oxygen supplementation  P-type  ZnO  
ZnO-based matierial, heterojunction and photoelctronic device Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 1,Page: 1-60
Authors:  Shen D.-Z.;  Mei Z.-X.;  Liang H.-L.;  Du X.-L.;  Ye J.-D.;  Gu S.-L.;  Wu Y.-X.;  Xu C.-X.;  Zhu G.-Y.;  Dai J.;  Chen M.-M.;  Ji X.;  Tang Z.-K.;  Shan C.-X.;  Zhang B.-L.;  Du G.-T.;  Zhang Z.-Z.
Favorite |  | TC[WOS]:0 TC[Scopus]:32 | Submit date:2019/04/08
MgZnO  Molecular beam epitaxy  Surface/interface engineering  Ultraviolet photodetector  ZnO