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Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications Journal article
ACS Nano, 2019,Volume: 13,Issue: 9,Page: 10085-10094
Authors:  Zhao,Liyun;  Gao,Yan;  Su,Man;  Shang,Qiuyu;  Liu,Zhen;  Li,Qi;  Wei,Qi;  Li,Meili;  Fu,Lei;  Zhong,Yangguang;  Shi,Jia;  Chen,Jie;  Zhao,Yue;  Qiu,Xiaohui;  Liu,Xinfeng;  Tang,Ning;  Xing,Guichuan;  Wang,Xina;  Shen,Bo;  Zhang,Qing
Favorite |  | TC[WOS]:23 TC[Scopus]:23 | Submit date:2021/03/11
cesium lead bromide  gallium nitride  incommensurate epitaxy  lasing  perovskite  vapor-phase deposition  
Low Threshold Fabry–Pérot Mode Lasing from Lead Iodide Trapezoidal Nanoplatelets Journal article
Small, 2018,Volume: 14,Issue: 35
Authors:  Yangguang Zhong;  Qi Wei;  Zhen Liu;  Qiuyu Shang;  Liyun Zhao;  Ruiwen Shao;  Zhepeng Zhang;  Jie Chen;  Wenna Du;  Chao Shen;  Jun Zhang;  Yanfeng Zhang;  Peng Gao;  Guichuan Xing;  Xinfeng Liu;  Qing Zhang
Favorite |  | TC[WOS]:14 TC[Scopus]:13 | Submit date:2019/04/08
Layered Semiconductor  Microcavity  Pbi2  Small Laser  Van Der Waals Epitaxy  
Low Threshold Fabry-Perot Mode Lasing from Lead Iodide Trapezoidal Nanoplatelets Journal article
SMALL, 2018,Volume: 14,Issue: 35
Authors:  Zhong, Yangguang;  Wei, Qi;  Liu, Zhen;  Shang, Qiuyu;  Zhao, Liyun;  Shao, Ruiwen;  Zhang, Zhepeng;  Chen, Jie;  Du, Wenna;  Shen, Chao;  Zhang, Jun;  Zhang, Yanfeng;  Gao, Peng;  Xing, Guichuan;  Liu, Xinfeng;  Zhang, Qing
Favorite |  | TC[WOS]:14 TC[Scopus]:13 | Submit date:2018/10/30
layered semiconductor  microcavity  PbI2  small laser  van der Waals epitaxy  
Controllable Fabrication of Large-Area Wrinkled Graphene on a Solution Surface Journal article
ACS Applied Materials and Interfaces, 2016,Volume: 8,Issue: 17,Page: 10977-10984
Authors:  Chen W.;  Gui X.;  Liang B.;  Liu M.;  Lin Z.;  Zhu Y.;  Tang Z.
Favorite |  | TC[WOS]:27 TC[Scopus]:27 | Submit date:2019/04/08
graphene  interface interaction  morphological controls  stretchable sensors  wrinkles  
Carbon atoms in ethanol do not contribute equally to formation of single-walled carbon nanotubes Journal article
ACS Nano, 2013,Volume: 7,Issue: 4,Page: 3095-3103
Authors:  Xiang R.;  Hou B.;  Einarsson E.;  Zhao P.;  Harish S.;  Morimoto K.;  Miyauchi Y.;  Chiashi S.;  Tang Z.;  Maruyama S.
Favorite |  | TC[WOS]:32 TC[Scopus]:33 | Submit date:2019/04/08
growth mechanism  isotope labeling  precursor decomposition  single-walled carbon nanotube  
Unconventional growth mechanism for monolithic integration of III-V on silicon Journal article
ACS Nano, 2013,Volume: 7,Issue: 1,Page: 100-107
Authors:  Ng K.W.;  Ko W.S.;  Tran T.-T.D.;  Chen R.;  Nazarenko M.V.;  Lu F.;  Dubrovskii V.G.;  Kamp M.;  Forchel A.;  Chang-Hasnain C.J.
Favorite |  | TC[WOS]:47 TC[Scopus]:51 | Submit date:2019/04/08
critical thickness  III-V on Si  laser  nanoneedle  nanopillar  nanowire  transmission electron microscopy  
Synthesis and characteristics of Ti-Fe nanoparticles by hydrogen plasma-metal reaction Journal article
Intermetallics, 2004,Volume: 12,Issue: 1,Page: 97-102
Authors:  Liu T.;  Shao H.;  Li X.
Favorite |  | TC[WOS]:23 TC[Scopus]:27 | Submit date:2019/04/08
A. Nanostructured intermetallics  C. Vapor deposition metals  Crystal structure  Hydrogen plasma  Morphology  
Effect of composition and growth temperature on the dielectric properties of Pb(ScTa)1-xTixO3 (PSTT) thin films grown by MOCVD Conference paper
Ferroelectrics
Authors:  Lin C.H.;  Friddle P.A.;  Ma C.H.;  Chen H.
Favorite |  | TC[WOS]:1 TC[Scopus]:1 | Submit date:2019/04/08
composition  dielectric dispersion  growth temperature  Relaxor  
Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition Journal article
Journal of Materials Research, 2000,Volume: 15,Issue: 1,Page: 115-124
Authors:  Lin C.H.;  Yen B.M.;  Kuo H.C.;  Chen H.;  Wu T.B.;  Stillman G.E.
Favorite |  | TC[WOS]:10 TC[Scopus]:9 | Submit date:2019/04/08
Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si Journal article
Applied Physics Letters, 1999,Volume: 75,Issue: 16,Page: 2485-2487
Authors:  Lin C.H.;  Lee S.W.;  Chen H.;  Wu T.B.
Favorite |  | TC[WOS]:11 TC[Scopus]:12 | Submit date:2019/04/08