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Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes Journal article
IEEE Photonics Journal, 2016,Volume: 8,Issue: 3
Authors:  Zhu B.;  Tan S.T.;  Liu W.;  Lu S.;  Zhang Y.;  Chen S.;  Hasanov N.;  Kang X.;  Demir H.V.
Favorite |  | TC[WOS]:2 TC[Scopus]:2 | Submit date:2019/04/08
InGaxNyOz interfacial layer  ITO  LED  ohmic contact