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A sub-6g sp32t single-chip switch with nanosecond switching speed for 5g applications in 0.25 µm gaas technology Journal article
Electronics (Switzerland), 2021,Volume: 10,Issue: 12
Authors:  Wu, Tianxiang;  Wei, Jipeng;  Liu, Hongquan;  Ma, Shunli;  Chen, Yong;  Ren, Junyan
Favorite |  | TC[WOS]:1 TC[Scopus]:1 | Submit date:2021/10/28
Gaas Process  Pseudomorphic High-electron-mobility Transistor (Phemt)  Single-pole 32-throw (Sp32t) Switch  Sub-6g  
A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power Journal article
IEEE Transactions on Microwave Theory and Techniques, 2016,Volume: 64,Issue: 1,Page: 200-209
Authors:  U. R. Jagadheswaran;  Harikrishnan Ramiah;  Pui-In Mak;  Rui P. Martins
Favorite |  | TC[WOS]:17 TC[Scopus]:20 | Submit date:2019/02/11
Adjacent Channel Leakage Ratio (Aclr)  Error Vector Magnitude (Evm)  Gallium-arsenide (Gaas)  Long-term Evolution (Lte)  Power Amplifier (Pa)  Power-added Efficiency (Pae)  Quadrature Amplitude Modulation (Qam)  
A 2-μ InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power Journal article
IEEE Transactions on Microwave Theory and Techniques, 2016,Volume: 64,Issue: 1,Page: 200-209
Authors:  Jagadheswaran,U. R.;  Ramiah,Harikrishnan;  Mak,Pui In;  Martins,Rui P.
Favorite |  | TC[WOS]:17 TC[Scopus]:20 | Submit date:2021/03/09
Adjacent channel leakage ratio (ACLR)  Error vector magnitude (EVM)  Gallium-arsenide (GaAs)  Long-term evolution (LTE)  Power amplifier (PA)  Power-added efficiency (PAE)  Quadrature amplitude modulation (QAM)  
Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD Conference paper
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Authors:  Yang Q.;  Hartmann Q.J.;  Curtis A.P.;  Lin C.;  Ahmari D.A.;  Scott D.;  Kuo H.C.;  Chen H.;  Stillman G.E.
Favorite |  | TC[WOS]:0 TC[Scopus]:1 | Submit date:2019/04/08