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Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength
Shi, J.-W.1; Gan, K.-G.2; Bowers, J.E.2; Liu, T.-M.3; Sun, C.-K.3; Chiu, Y.-J.4
2003
Conference Name5th Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 2003
Source PublicationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
Volume2
Pages406
Conference Date2003
Conference PlaceTaipei; Taiwan
PublisherInstitute of Electrical and Electronics Engineers Inc.
Abstract

We observed distinct nonlinear behaviors of bandwidth degradation in low-temperature-grown-GaAs based traveling-wave-photodetectors under long wavelength (∼1300nm) operation. The disclosed unique material properties of LTG-GaAs at different excitation wavelengths are important for its applications in ultrafast optoelectronic and understanding its carrier dynamics in the defect states.

DOIhttp://dx.doi.org/10.1109/CLEOPR.2003.1276962
Indexed BySCIE
Language英語English
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Document TypeConference paper
CollectionFaculty of Health Sciences
Affiliation1.Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu, 310, Taiwan
2.Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106-5050, United States
3.Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, 10617, Taiwan
4.Graduate Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan
Recommended Citation
GB/T 7714
Shi, J.-W.,Gan, K.-G.,Bowers, J.E.,et al. Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength[C]:Institute of Electrical and Electronics Engineers Inc.,2003:406.
APA Shi, J.-W.,Gan, K.-G.,Bowers, J.E.,Liu, T.-M.,Sun, C.-K.,&Chiu, Y.-J..(2003).Nonlinear behaviors of low-temperature-grown GaAs based photodetectors at long telecommunication wavelength.Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest,2,406.
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