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Surface passivation of organometal halide perovskites by atomic layer deposition: An investigation of the mechanism of efficient inverted planar solar cells
Ran Zhao1; Kai Zhang,2; Jiahao Zhu,1; Shuang Xiao2; Wei Xiong1; Jian Wang2; Tanghao Liu3; Guichuan Xing3; Kaiyang Wang3; Shihe Yang2; Xinwei Wang1
2021-04-21
Source PublicationNanoscale Advances
Volume3Issue:8Pages:2305-2315
Other Abstract

Interface passivation plays a pivotal role in achieving high-efficiency organic metal halide perovskite solar cells (PSCs). It has been recently revealed that atomic layer deposition (ALD) of wide-band gap oxides shows great potential to effectively passivate defects at the interface, and ALD is also of great technological promise for industrial upscaling. However, the conflicting observations of ALD passivation are often reported in the literature, even with very similar ALD conditions. To unveil the involved crucial mechanism, this work carefully investigates the evolution of a representative MAPbI3 perovskite surface during the ALD of Al2O3, by employing the technique of in situ X-ray photoelectron spectroscopy. The ALD at 125 °C was found to cause significant degradation of the perovskite; lowering the deposition temperature can largely minimize the degradation, and 75 °C was found to be the best ALD temperature. Following this conclusion, inverted planar perovskite solar cells were prepared in ambient conditions with ALD Al2O3 interlayers. Indeed, cells with the interlayer deposited at 75 °C exhibited a significantly enhanced power conversion efficiency from 18.8% (champion 19.2%) to 20.0% (champion 20.4%). Photoluminescence measurements further evidence that the ALD layer can effectively passivate defect states at the perovskite surface. Considering the great representativeness and broad applicability of MAPbI3 and ALD Al2O3, the mechanism and strategy reported herein should be of significant value for the perovskite interface engineering in general.

DOI10.1039/d1na00075f
URLView the original
Language英語English
WOS Research AreaChemistry ; Science & Technology - Other Topics ; Materials Science
WOS SubjectChemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000641547400013
PublisherROYAL SOC CHEMISTRY,THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND
Scopus ID2-s2.0-85104919496
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Cited Times [WOS]:5   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Corresponding AuthorShihe Yang; Xinwei Wang
Affiliation1.School of Advanced Materials, Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
2.Guangdong Key Lab of Nano-Micro Material Research, School of Chemical Biology and Biotechnology, Shenzhen Graduate School, Peking University, Shenzhen, 518055, China
3.Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Avenida da Universidade, Macao
Recommended Citation
GB/T 7714
Ran Zhao,Kai Zhang,,Jiahao Zhu,,et al. Surface passivation of organometal halide perovskites by atomic layer deposition: An investigation of the mechanism of efficient inverted planar solar cells[J]. Nanoscale Advances,2021,3(8):2305-2315.
APA Ran Zhao,Kai Zhang,,Jiahao Zhu,,Shuang Xiao,Wei Xiong,Jian Wang,Tanghao Liu,Guichuan Xing,Kaiyang Wang,Shihe Yang,&Xinwei Wang.(2021).Surface passivation of organometal halide perovskites by atomic layer deposition: An investigation of the mechanism of efficient inverted planar solar cells.Nanoscale Advances,3(8),2305-2315.
MLA Ran Zhao,et al."Surface passivation of organometal halide perovskites by atomic layer deposition: An investigation of the mechanism of efficient inverted planar solar cells".Nanoscale Advances 3.8(2021):2305-2315.
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