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Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications
Zhao,Liyun1; Gao,Yan1,3; Su,Man1; Shang,Qiuyu1; Liu,Zhen1; Li,Qi1,3; Wei,Qi4; Li,Meili1; Fu,Lei2; Zhong,Yangguang5; Shi,Jia5; Chen,Jie5; Zhao,Yue6; Qiu,Xiaohui5; Liu,Xinfeng5; Tang,Ning2; Xing,Guichuan4; Wang,Xina3; Shen,Bo2; Zhang,Qing1
2019-09-24
Source PublicationACS Nano
ISSN1936-0851
Volume13Issue:9Pages:10085-10094
AbstractIntegrating metallic halide perovskites with established modern semiconductor technology is significant for promoting the development of application-level optoelectronic devices. To realize such devices, exploring the growth dynamics and interfacial carrier dynamics of perovskites deposited on the core materials of semiconductor technology is essential. Herein, we report the incommensurate heteroepitaxy of highly oriented single-crystal cesium lead bromide (CsPbBr) on c-wurtzite GaN/sapphire substrates with atomically smooth surface and uniform rectangular shape by chemical vapor deposition. The CsPbBr microplatelet crystal exhibits green-colored lasing under room temperature and has a structural stability comparable with that grown on van der Waals mica substrates. Time-resolved photoluminescence spectroscopy studies show that the type-II CsPbBr-GaN heterojunction effectively enhances the separation and extraction of free carriers inside CsPbBr. These findings provide insights into the fabrication and application-level integrated optoelectronic devices of CsPbBr perovskites.
Keywordcesium lead bromide gallium nitride incommensurate epitaxy lasing perovskite vapor-phase deposition
DOI10.1021/acsnano.9b02885
URLView the original
Language英语
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Cited Times [WOS]:23   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Corresponding AuthorZhang,Qing
Affiliation1.Department of Materials Science and Engineering,College of Engineering,Beijing,100871,China
2.State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing,100871,China
3.Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials,Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices,Faculty of Physics and Electronic Science,Hubei University,Wuhan,430062,China
4.Joint Key Laboratory of the Ministry of Education,Institute of Applied Physics and Materials Engineering,University of Macau,999078,Macao
5.CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center of Excellence for Nanoscience,National Center for Nanoscience and Technology,Beijing,100190,China
6.Institute for Quantum Science and Engineering and Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
Recommended Citation
GB/T 7714
Zhao,Liyun,Gao,Yan,Su,Man,et al. Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications[J]. ACS Nano,2019,13(9):10085-10094.
APA Zhao,Liyun,Gao,Yan,Su,Man,Shang,Qiuyu,Liu,Zhen,Li,Qi,Wei,Qi,Li,Meili,Fu,Lei,Zhong,Yangguang,Shi,Jia,Chen,Jie,Zhao,Yue,Qiu,Xiaohui,Liu,Xinfeng,Tang,Ning,Xing,Guichuan,Wang,Xina,Shen,Bo,&Zhang,Qing.(2019).Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications.ACS Nano,13(9),10085-10094.
MLA Zhao,Liyun,et al."Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications".ACS Nano 13.9(2019):10085-10094.
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