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Factors influencing the working temperature of quantum dot light-emitting diodes
Zhang,Tianqi1,2; Tang,Haodong1; Zhou,Shuling3; Ding,Shihao1; Xiao,Xiangtian1; Wen,Zuoliang1; Niu,Gaoqiang4; Luo,Xiaobing3; Wang,Fei4; Sun,Xiao Wei1; Xing,Guichuan2; Wang,Kai1
2020-11-09
Source PublicationOptics Express
Volume28Issue:23Pages:34167-34179
AbstractQuantum dot light-emitting diodes (QLEDs) possess huge potential in display due to their outstanding optoelectronic performance; however, serve degradation during operation blocks their practical applications. High temperature is regarded as one of major factors causing degradation. Therefore, a systematical study on the working temperature of QLEDs is very essential and urgent for the development of high stable QLEDs. In this work, different influence factors such as the electro-optic conversion efficiency (EOCE), voltage, current density, active area, substrate size, substrate type and sample contact are discussed in detail on the working temperature of QLEDs. The research results show that the working temperature of general QLEDs under normal operation conditions is usually smaller than 75 °C when the ambient temperature is 25 °C. However, temperature of QLEDs working under extreme conditions, such as high power or small substrate size, will exceed 100 °C, resulting in irreversible damage to the devices. Moreover, some effective measures to reduce the working temperature are also proposed. The analysis and discussion of various influencing factors in this work will provide guidance for the design of stable QLEDs and help them work at a safer temperature.
DOI10.1364/OE.410393
URLView the original
Language英语
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Cited Times [WOS]:1   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting,Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting,Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
2.Institute of Applied Physics and Materials Engineering,University of Macau,999078,Macao
3.State Key Laboratory of Combustion,School of Energy and Power Engineering,Huazhong University of Science and Technology,Wuhan,430074,China
4.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Zhang,Tianqi,Tang,Haodong,Zhou,Shuling,et al. Factors influencing the working temperature of quantum dot light-emitting diodes[J]. Optics Express,2020,28(23):34167-34179.
APA Zhang,Tianqi,Tang,Haodong,Zhou,Shuling,Ding,Shihao,Xiao,Xiangtian,Wen,Zuoliang,Niu,Gaoqiang,Luo,Xiaobing,Wang,Fei,Sun,Xiao Wei,Xing,Guichuan,&Wang,Kai.(2020).Factors influencing the working temperature of quantum dot light-emitting diodes.Optics Express,28(23),34167-34179.
MLA Zhang,Tianqi,et al."Factors influencing the working temperature of quantum dot light-emitting diodes".Optics Express 28.23(2020):34167-34179.
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