UM
A Fully Integrated LDO with 50-mV Dropout for Power Efficiency Optimization
Ma,Xiaofei1; Lu,Yan2; Li,Qiang1
2020-04-01
Source PublicationIEEE Transactions on Circuits and Systems II: Express Briefs
ISSN1549-7747
Volume67Issue:4Pages:725-729
AbstractThis brief presents, a fully integrated low-dropout regulator (LDO) with 50-mV dropout voltage for high power efficiency, with a LDO-self-supplied differential error amplifier (EA) for higher power supply rejection (PSR), and a coupled transient enhancement unit for fast transient response. With 50-mV dropout voltage, the LDO can achieve 94.4% power efficiency in the full load condition. The LDO is fabricated in a standard 28-nm bulk CMOS process with 0.0086-mm active area. It features a 288-MHz unity-gain bandwidth (UGB) at 20-mA load current, while consuming a quiescent current of 33 {\mu }\text{A}. With such high bandwidth and the coupled transient enhancement unit, the proposed LDO achieves 270-ps response time for a 0-to-20-mA load transient with 100-ps edge time. The self-supplied EA helps to achieve a PSR of -30 dB even with only 50-mV dropout. The ultra-fast response, small area, and high efficiency features make the proposed LDO very suitable for working as distributed point-of-load regulators in a digital system.
Keywordhigh power efficiency Low-dropout regulator output-capacitor-free ultra-fast response
DOI10.1109/TCSII.2019.2919665
URLView the original
Language英语
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Cited Times [WOS]:4   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Corresponding AuthorLi,Qiang
Affiliation1.Integrated Systems Laboratory,University of Electronic Science and Technology of China,Chengdu,China
2.State Key Laboratory of Analog and Mixed-Signal VLSI,University of Macau,Macao
Recommended Citation
GB/T 7714
Ma,Xiaofei,Lu,Yan,Li,Qiang. A Fully Integrated LDO with 50-mV Dropout for Power Efficiency Optimization[J]. IEEE Transactions on Circuits and Systems II: Express Briefs,2020,67(4):725-729.
APA Ma,Xiaofei,Lu,Yan,&Li,Qiang.(2020).A Fully Integrated LDO with 50-mV Dropout for Power Efficiency Optimization.IEEE Transactions on Circuits and Systems II: Express Briefs,67(4),725-729.
MLA Ma,Xiaofei,et al."A Fully Integrated LDO with 50-mV Dropout for Power Efficiency Optimization".IEEE Transactions on Circuits and Systems II: Express Briefs 67.4(2020):725-729.
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