UM  > INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Affiliated with RCfalse
WS2 Nanosheets with Highly-Enhanced Electrochemical Activity by Facile Control of Sulfur Vacancies
Qing Zhu1; Wenzhou Chen1; Hua Cheng2; Zhouguang Lu2; Hui Pan1,3
2019-06-06
Source PublicationChemCatChem
ISSN1867-3880
Volume11Issue:11Pages:2667-2675
Abstract

Tungsten disulfide (WS2) is a promising and low-cost material for electrochemical hydrogen evolution reaction (HER) and has been extensively studied due to its excellent performance. However, the development of a facile and controllable defect-engineering to activate its basal planes is still crucial to improve its HER activity. Here, we put forward an annealing strategy to create controllable sulfur vacancies (S-vacancies) in ultrathin WS2 nanosheets, which can result in the increase of active sites and enhanced electrocatalytic activity accordingly. Our density-functional-theory (DFT) calculations reveal that the Gibbs free energy of hydrogen adsorption (ΔGH*) can be tuned to near zero by controlling the density of S-vacancies, leading to thermal-neutral HER performance. We find that optimal HER performance can be achieved by tuning the density of S-vacancies in WS2 through annealing in the mixture of Ar and H2 (5 %). The WS2 nanosheets with the optimal density of S-vacancies show lower overpotential by 116 mV at 10 mA/cm2 and smaller Tafel slope by 37.9 mV/dec than as-prepared counterpart, and super-excellent stability in acid. Additionally, the WS2 with optimal S-vacancies also shows the best HER activity in alkaline solution. Our findings present a facile and general strategy to design electrocatalysts with more active sites, which is applicable to other materials for the improvement of their catalytic activities.

KeywordAnnealing Dft Calculation Electrocatalyst Hydrogen Evolution Reaction Sulfur Vacancy Ws2 Nanosheets
DOI10.1002/cctc.201900341
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaChemistry
WOS SubjectChemistry, Physical
WOS IDWOS:000470937300013
Scopus ID2-s2.0-85065962717
Fulltext Access
Citation statistics
Cited Times [WOS]:18   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorHui Pan
Affiliation1.Joint Key Laboratory of the Ministry of Education Institute of Applied Physics and Materials Engineering,University of Macau,999078,Macao
2.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.Department of Physics and Chemistry Faculty of Science and Technology,University of Macau,999078,Macao
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING;  Faculty of Science and Technology
Recommended Citation
GB/T 7714
Qing Zhu,Wenzhou Chen,Hua Cheng,et al. WS2 Nanosheets with Highly-Enhanced Electrochemical Activity by Facile Control of Sulfur Vacancies[J]. ChemCatChem,2019,11(11):2667-2675.
APA Qing Zhu,Wenzhou Chen,Hua Cheng,Zhouguang Lu,&Hui Pan.(2019).WS2 Nanosheets with Highly-Enhanced Electrochemical Activity by Facile Control of Sulfur Vacancies.ChemCatChem,11(11),2667-2675.
MLA Qing Zhu,et al."WS2 Nanosheets with Highly-Enhanced Electrochemical Activity by Facile Control of Sulfur Vacancies".ChemCatChem 11.11(2019):2667-2675.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Qing Zhu]'s Articles
[Wenzhou Chen]'s Articles
[Hua Cheng]'s Articles
Baidu academic
Similar articles in Baidu academic
[Qing Zhu]'s Articles
[Wenzhou Chen]'s Articles
[Hua Cheng]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Qing Zhu]'s Articles
[Wenzhou Chen]'s Articles
[Hua Cheng]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.