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Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions
Yangfan Shao1,2; Qian Wang1; Hui Pan2,3; Xingqiang Shi1
2019-12-18
Source PublicationAdvanced Electronic Materials
ISSN2199-160X
Volume6Issue:3
Other Abstract

Two-dimensional (2D) layered semiconductors with an intrinsic electric dipole p (pS for short), including group III-VI ferroelectrics and various Janus semiconductors, are attracting increasing attention for their exotic properties and versatile applications. Their potential in metal–semiconductor junctions is revealed. It is demonstrated that, for pS contacting to 2D metals with a wide range of work-functions, Schottky-barrier-free (SB-free) and tunable n- to p-type contacts can be obtained, which is important for complementary metal-oxide-semiconductor logical circuitry. As expected, low (high) work-function (WF) metals form n-type (p-type) SB-free contacts to pS. What is unexpected is the behavior of medium-WF metal-pS junctions (MpSJ); that is, by switching the polarization in pS, both n- and p-type SB-free contacts can be obtained by the same pS contacting to metals with a wide range of WF. More importantly, MpSJ with bilayer pS can form both n- and p-type SB-free contacts. These findings, SB-free and contact-type-tunable of MpSJ for metals with a wide range of work-functions, demonstrate the great potential of 2D pS for device applications.

Keyword2d Janus Semiconductors Group Iii 2-vi 3 Ferroelectrics Schottky-barrier-free Contact Tunable N- To P-type Contacts
DOI10.1002/aelm.201900981
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000503218900001
Scopus ID2-s2.0-85076773721
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Cited Times [WOS]:5   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Corresponding AuthorHui Pan
Affiliation1.Department of Physics and Guangdong Provincial Key Laboratory for Computational Science and Material Design,Southern University of Science and Technology,Shenzhen,518055,China
2.Joint Key Laboratory of the Ministry of Education,Institute of Applied Physics and Materials Engineering,University of Macau,999078,Macao
3.Department of Physics and Chemistry,Faculty of Science and Technology,University of Macau,999078,Macao
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING;  Faculty of Science and Technology
Recommended Citation
GB/T 7714
Yangfan Shao,Qian Wang,Hui Pan,et al. Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions[J]. Advanced Electronic Materials,2019,6(3).
APA Yangfan Shao,Qian Wang,Hui Pan,&Xingqiang Shi.(2019).Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions.Advanced Electronic Materials,6(3).
MLA Yangfan Shao,et al."Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions".Advanced Electronic Materials 6.3(2019).
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