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A 2-μ InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power
Jagadheswaran,U. R.1; Ramiah,Harikrishnan2; Mak,Pui In3; Martins,Rui P.3,4
2016
Source PublicationIEEE Transactions on Microwave Theory and Techniques
ISSN0018-9480
Volume64Issue:1Pages:200-209
AbstractThis paper describes the first linear multistage class-J power amplifier (PA) fabricated in a 2-μ InGaP/GaAs HBT process for multi-band long-term evolution (LTE) applications. It includes a three-stage topology composed by a pre-driver, driver, and a class-J main stage, to optimize the output power and power-added efficiency (PAE) over 1.7-2.05 GHz, thus encapsulating the LTE bands 1 to 4, 9 to 10, 33 to 37, and 39. This is achieved through a novel analog pre-distorter linearizer, which features two sub-circuits for AM-AM and AM-PM linearization. The PA prototype meets the standard's adjacent channel leakage ratio(ACLR<-30) dBc at a maximum linear output power of 28 dBm. Tested at 2.05 GHz and for a 16-QAM scheme, the maximum error vector magnitude is 3.38% at a 28-dBm output power, which corresponds to a PAE of 40.5%-55.8% across bands. The input return loss is < -15 dB and the maximum power gain is 35.8 dB, while demonstrating an unconditional stable characteristic from dc up to 5 GHz. The die area is 950μ × 900μ. The performance metrics compare favorably with the state-of-the-art.
KeywordAdjacent channel leakage ratio (ACLR) Error vector magnitude (EVM) Gallium-arsenide (GaAs) Long-term evolution (LTE) Power amplifier (PA) Power-added efficiency (PAE) Quadrature amplitude modulation (QAM)
DOI10.1109/TMTT.2015.2498150
URLView the original
Language英语
Scopus ID2-s2.0-84959175113
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Cited Times [WOS]:15   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Silterra SDN Bhd,Kulim Kedah Darul Aman,09000,Malaysia
2.Faculty of Engineering,Department of Electrical Engineering,University of Malaya,Kuala Lumpur,50603,Malaysia
3.State-Key Laboratory of Analog and Mixed-Signal VLSI,Faculty of Science and Technology-Electrical and Computer Engineering (ECE),University of Macau,Macao
4.Instituto Superior Técnico,Universidade de Lisboa,Lisbon,1649-004,Portugal
Recommended Citation
GB/T 7714
Jagadheswaran,U. R.,Ramiah,Harikrishnan,Mak,Pui In,et al. A 2-μ InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power[J]. IEEE Transactions on Microwave Theory and Techniques,2016,64(1):200-209.
APA Jagadheswaran,U. R.,Ramiah,Harikrishnan,Mak,Pui In,&Martins,Rui P..(2016).A 2-μ InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power.IEEE Transactions on Microwave Theory and Techniques,64(1),200-209.
MLA Jagadheswaran,U. R.,et al."A 2-μ InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power".IEEE Transactions on Microwave Theory and Techniques 64.1(2016):200-209.
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