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A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer with Integrated Transformer-Based Gate Inductor and IM2 Injection Technique
Vitee,Nandini1; Ramiah,Harikrishnan1; Mak,Pui In2; Yin,Jun2; Martins,Rui P.2
2020-03-01
Source PublicationIEEE Transactions on Very Large Scale Integration (VLSI) Systems
ISSN1063-8210
Volume28Issue:3Pages:700-713
AbstractThis article proposes two linearization techniques in improving the third-order input intercept point (IIP3) of a balun-low-noise amplifier (LNA) mixer. First, the intrinsic third-order intermodulation (IM3) product of the inductively source degenerated (ISD) transconductor from the second-order derivative transconductance component ({g}''m) is reduced by tailoring toward the optimum biasing point at the moderate-inversion region. Second, the generated IM3 current by the first-order derivative transconductance ({g}'m) due to the interaction with the feedback component in the ISD transconductor is attenuated by second-harmonic injection via the bulk of the ISD transconductor. Furthermore, a transformer-based gate inductor and a transformer-based balun are applied to improve the input impedance matching and produce a balanced differential input signal. Measured results in 0.13- μ m CMOS show a high IIP3 of +16 dBm and a conversion gain (CG) of 22 dB at 2.4 GHz. The double-sideband (DSB) noise figure (NF) is 7.2 dB, and the power consumption is 3.15 mW at 1.2 V.
KeywordBalun-low-noise amplifier (LNA) mixer CMOS high linearity inductively source degeneration transconductor low-power second-order intermodulation (IM2) injection third-order input intercept point (IIP3) Volterra series
DOI10.1109/TVLSI.2019.2950961
URLView the original
Language英语
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Cited Times [WOS]:1   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionFaculty of Science and Technology
Corresponding AuthorRamiah,Harikrishnan
Affiliation1.Department of Electrical Engineering,Faculty of Engineering,University of Malaya,Kuala Lumpur,50603,Malaysia
2.State Key Laboratory of Analog and Mixed-Signal VLSI,University of Macau,Macao
Recommended Citation
GB/T 7714
Vitee,Nandini,Ramiah,Harikrishnan,Mak,Pui In,et al. A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer with Integrated Transformer-Based Gate Inductor and IM2 Injection Technique[J]. IEEE Transactions on Very Large Scale Integration (VLSI) Systems,2020,28(3):700-713.
APA Vitee,Nandini,Ramiah,Harikrishnan,Mak,Pui In,Yin,Jun,&Martins,Rui P..(2020).A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer with Integrated Transformer-Based Gate Inductor and IM2 Injection Technique.IEEE Transactions on Very Large Scale Integration (VLSI) Systems,28(3),700-713.
MLA Vitee,Nandini,et al."A 3.15-mW +16.0-dBm IIP3 22-dB CG Inductively Source Degenerated Balun-LNA Mixer with Integrated Transformer-Based Gate Inductor and IM2 Injection Technique".IEEE Transactions on Very Large Scale Integration (VLSI) Systems 28.3(2020):700-713.
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