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Back-to-back symmetric Schottky type UVA photodetector based on ternary alloy BeZnO
Longxing Su1,2; Yuan Zhu3; Xiaojie Xu1; Hongyu Chen4; Zikang Tang5; Xiaosheng Fang1
2018-06-25
Source PublicationJOURNAL OF MATERIALS CHEMISTRY C
ISSN2050-7526
Volume6Issue:29Pages:7776-7782
Other Abstract

In this work, a back-to-back symmetric Schottky type ultraviolet (UV) photodetector based on ternary alloy BeZnO was reported. High quality ternary alloy BeZnO was grown on a c-sapphire substrate via rf-plasma assisted molecular beam epitaxy (rf-MBE). The bandgap of BeZnO film was confirmed to be similar to 3.54 eV and two-mode phonon vibration behavior was found in the resonant Raman spectrum. According to the modified random element isodisplacement (MREI) model, the two-mode behavior is due to the smaller effective mass of the substituting element Be in comparison with that of ZnO. Subsequently, we fabricated a symmetric Schottky type photodetector through using the high work function metal Au as the electrodes. Due to the incorporation of Be, the dark current of the device under 10 V is as low as similar to 1 pA. The device showed a noticeable UV response with a response peak at 325 nm and a cut-off edge at 365 nm. At 5 V, the peak responsivity was as high as 10 mA W-1, which is the best result in BeZnO based photodetectors. Compared with ZnO-based photoconductive type photodetectors, the Schottky type device has a much faster response speed with a rise time of 1.48 ms and a decay time of 4 ms. Our findings provide a promising approach to realize a high performance UV photodetector based on novel ternary alloy BeZnO.

DOI10.1039/c8tc02255k
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000445742500009
PublisherROYAL SOC CHEMISTRY
The Source to ArticleWOS
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Cited Times [WOS]:10   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorZikang Tang; Xiaosheng Fang
Affiliation1.Department of Materials Science, Fudan University, Shanghai 200433, P. R. China
2.School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China
3.College of Innovation and Entrepreneurship, Southern University of Science and Technology, Shenzhen 518055, P. R. China
4.Department of Physics, Harbin Institute of Technology, Harbin 150001, P. R. China
5.Institute of Applied Physics and Materials Engineering, University of Macau, Macau, P. R. China
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Longxing Su,Yuan Zhu,Xiaojie Xu,et al. Back-to-back symmetric Schottky type UVA photodetector based on ternary alloy BeZnO[J]. JOURNAL OF MATERIALS CHEMISTRY C,2018,6(29):7776-7782.
APA Longxing Su,Yuan Zhu,Xiaojie Xu,Hongyu Chen,Zikang Tang,&Xiaosheng Fang.(2018).Back-to-back symmetric Schottky type UVA photodetector based on ternary alloy BeZnO.JOURNAL OF MATERIALS CHEMISTRY C,6(29),7776-7782.
MLA Longxing Su,et al."Back-to-back symmetric Schottky type UVA photodetector based on ternary alloy BeZnO".JOURNAL OF MATERIALS CHEMISTRY C 6.29(2018):7776-7782.
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