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Low-threshold GaN thin-film random laser through the weak scattering feedback
Hai Zhu1; Anqi Chen1; Yanyan Wu1; Xu Ji2; Yiting He1; Zhiren Qiu1; Zikang Tang1,3; Siufung Yu4
2017-01-04
Source PublicationJOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN0022-3727
Volume50Issue:4
Abstract

Room temperature random lasing is demonstrated from a GaN epitaxy film with defect pits that result from growth imperfection. The optical coherence feedback is attributed to the formation of closed-loop paths of light through the scattering effect of the defect pits, which can avoid the difficulty of fabricating an artificial cavity. The random lasing action was also investigated through near and far-field patterns that imaged onto the CCD camera. In addition, the angle distribution of the laser beam was illustrated by use of an angle-resolved spectrometer. The lasing threshold, based on the weak scattering diffusive mode of GaN, is about one order of magnitude lower than that strong scattering random laser (RL). Hence, the results in this paper represent a low-cost technique to realize GaN-based laser diodes without the fabrication difficulty of cavity facets that result from the hardness of the sapphire substrate.

KeywordRandom Lasing Diffusive Mode Multiple Scattering Semiconductor
DOI10.1088/1361-6463/aa4f66
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaPhysics
WOS SubjectPhysics, Applied
WOS IDWOS:000394090500001
PublisherIOP PUBLISHING LTD
The Source to ArticleWOS
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Cited Times [WOS]:8   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorHai Zhu
Affiliation1.State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China
2.State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials and Engineering, Sun Yat-Sen University, Guangzhou 510275, People’s Republic of China
3.The Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau, People’s Republic of China
4.Department of Applied Physics, the Hong Kong Polytechnic University, Hung Hum, Kowloon, Hong Kong, People’s Republic of China
Recommended Citation
GB/T 7714
Hai Zhu,Anqi Chen,Yanyan Wu,et al. Low-threshold GaN thin-film random laser through the weak scattering feedback[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2017,50(4).
APA Hai Zhu,Anqi Chen,Yanyan Wu,Xu Ji,Yiting He,Zhiren Qiu,Zikang Tang,&Siufung Yu.(2017).Low-threshold GaN thin-film random laser through the weak scattering feedback.JOURNAL OF PHYSICS D-APPLIED PHYSICS,50(4).
MLA Hai Zhu,et al."Low-threshold GaN thin-film random laser through the weak scattering feedback".JOURNAL OF PHYSICS D-APPLIED PHYSICS 50.4(2017).
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