UM
In situ X-ray diffraction study of the formation of TiSi 2 -C49 phase from Ti-Si multilayers on Si(100)
Sariel J.1; Chen H.3; Jongste J.F.2; Radelaar S.2
1995
Source PublicationMaterials Chemistry & Physics
ISSN02540584
Volume40Issue:2Pages:82-86
AbstractThe kinetics of the formation of a metastable TiSi -C49 phase from amorphous Ti-Si multilayers grown on Si(100) substrate has been studied using a time-resolved X-ray diffraction technique at elevated temperatures ranging from 270 to 310 °C. A linear position-sensitive proportional counter (PSPC) was used to simultaneously collect the (131) and (150) Bragg peaks of the C49 phase. The kinetics data were analyzed using the Johnson-Mehl-Avrami (JMA) equation. The Avrami exponent was found to be 2.0 ± 0.1; the reaction rate constants follow a familiar Arrhenius-type behavior resulting in an activation energy of 2.5 eV. Comparison of our X-ray results with kinetics data obtained by other means is discussed. © 1995.
KeywordTitanium disilicide X-ray diffraction
DOI10.1016/0254-0584(94)01457-R
URLView the original
Language英語English
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Cited Times [WOS]:1   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Nuclear Research Center-Negev
2.Delft Institute of Microelectronics and Submicrontechnology - DIMES
3.University of Illinois at Urbana-Champaign
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Sariel J.,Chen H.,Jongste J.F.,et al. In situ X-ray diffraction study of the formation of TiSi 2 -C49 phase from Ti-Si multilayers on Si(100)[J]. Materials Chemistry & Physics,1995,40(2):82-86.
APA Sariel J.,Chen H.,Jongste J.F.,&Radelaar S..(1995).In situ X-ray diffraction study of the formation of TiSi 2 -C49 phase from Ti-Si multilayers on Si(100).Materials Chemistry & Physics,40(2),82-86.
MLA Sariel J.,et al."In situ X-ray diffraction study of the formation of TiSi 2 -C49 phase from Ti-Si multilayers on Si(100)".Materials Chemistry & Physics 40.2(1995):82-86.
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