UM
Structural and dielectric properties of Ba0.85Sr 0.15(Zr0.18Ti0.85)O3 thin films grown by a sol-gel process
Zhai J.1; Yao X.1; Chen H.2
2004-09-07
Source PublicationCeramics International
Volume30
Issue7
Pages1237-1240
AbstractThe BaSrZrTi O (BSZT) thin films were deposited via sol-gel process on LaNiO-coated silicon substrates. The grain size decreased and the microstructure became dense when substitute Zr for Ti. Dielectric properties were investigated as a function of temperature, frequency and direct current electric field. The temperature dependent dielectric measurements revealed that the thin films have diffuse phase transition characteristics. The tunability of BaSrSnTi O thin films is about 57%, at an applied field of 415kV/cm and measurement frequency of 1MHz. It was observed that the leakage current density of BaSrZrTi O is higher than that of BZT thin films. © 2004 Elsevier Ltd. and Techna Group S.r.l. All rights reserved.
KeywordB. Microstructure BSZT thin film C. Dielectric properties Phase transition
DOI10.1016/j.ceramint.2003.12.073
URLView the original
Language英語English
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Cited Times [WOS]:26   [WOS Record]     [Related Records in WOS]
Document TypeConference paper
CollectionUniversity of Macau
Affiliation1.Tongji University
2.City University of Hong Kong
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GB/T 7714
Zhai J.,Yao X.,Chen H.. Structural and dielectric properties of Ba0.85Sr 0.15(Zr0.18Ti0.85)O3 thin films grown by a sol-gel process[C],2004:1237-1240.
APA Zhai J.,Yao X.,&Chen H..(2004).Structural and dielectric properties of Ba0.85Sr 0.15(Zr0.18Ti0.85)O3 thin films grown by a sol-gel process.Ceramics International,30(7),1237-1240.
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