A facile route to arsenic-doped p-type ZnO films
Wang S.P.2; Shan C.X.2; Li B.H.2; Zhang J.Y.2; Yao B.2; Shen D.Z.2; Fan X.W.2
Source PublicationJournal of Crystal Growth
AbstractUndoped zinc oxide (ZnO) films have been prepared on sapphire substrates in a molecular beam epitaxy technique, and the films were annealed in air ambient along with a GaAs wafer. Arsenic in the GaAs wafer will evaporate, and enter into the ZnO films. In this facile way, arsenic-doped p-ZnO has been obtained. Hall measurements reveal that the hole concentration and Hall mobility of the ZnO:As films obtained in this way can reach 3.7×10 cm and 2.8 cm V S, respectively. X-ray photoelectron spectroscopy confirms the incorporation of arsenic into the ZnO films. The activation energy of the acceptors derived from temperature-dependent Hall measurement is about 164 meV. © 2009 Elsevier B.V. All rights reserved.
KeywordA1. Diffusion A1. Doping A3. Molecular beam epitaxy B2. Semiconducting II-VI materials
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Cited Times [WOS]:17   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Chinese Academy of Sciences
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
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Wang S.P.,Shan C.X.,Li B.H.,et al. A facile route to arsenic-doped p-type ZnO films[J]. Journal of Crystal Growth,2009,311(14):3577-3580.
APA Wang S.P..,Shan C.X..,Li B.H..,Zhang J.Y..,Yao B..,...&Fan X.W..(2009).A facile route to arsenic-doped p-type ZnO films.Journal of Crystal Growth,311(14),3577-3580.
MLA Wang S.P.,et al."A facile route to arsenic-doped p-type ZnO films".Journal of Crystal Growth 311.14(2009):3577-3580.
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