On the origin of intrinsic donors in ZnO
Sun F.2; Shan C.X.2; Wang S.P.2; Li B.H.2; Zhang J.Y.2; Zhang Z.Z.2; Zhao D.X.2; Yao B.2; Shen D.Z.2; Fan X.W.2
Source PublicationApplied Surface Science
AbstractAs-grown undoped zinc oxide (ZnO) films have been annealed in zinc-rich, oxygen-rich and vacuum ambient, and the electron concentration varied greatly after the annealing process. It decreased nearly two orders of magnitude after the sample was annealed in oxygen, while increased nearly three times after annealed in metallic zinc ambient, and increased slightly after annealed in vacuum. It was found that the variation trend of the electron concentration is always the same with the expected variation of oxygen vacancy (V ) under the three investigated conditions, it is thus speculated that V may be the dominant donor source in ZnO. By supplying more oxygen during the growth process to suppress V , ZnO films with lower electron concentration were obtained, which verifies the above speculation. © 2009 Elsevier B.V. All rights reserved.
KeywordCarrier concentration Hall measurement Intrinsic donors Zinc oxide
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Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Chinese Academy of Sciences
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Sun F.,Shan C.X.,Wang S.P.,et al. On the origin of intrinsic donors in ZnO[J]. Applied Surface Science,2010,256(11):3390-3393.
APA Sun F.,Shan C.X.,Wang S.P.,Li B.H.,Zhang J.Y.,Zhang Z.Z.,Zhao D.X.,Yao B.,Shen D.Z.,&Fan X.W..(2010).On the origin of intrinsic donors in ZnO.Applied Surface Science,256(11),3390-3393.
MLA Sun F.,et al."On the origin of intrinsic donors in ZnO".Applied Surface Science 256.11(2010):3390-3393.
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