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Photoconductive gain in solar-blind ultraviolet photodetector based on Mg 0.52 Zn 0.48 O thin film
Han S.3; Zhang Z.3; Zhang J.3; Wang L.3; Zheng J.3; Zhao H.3; Zhang Y.2; Jiang M.3; Wang S.3; Zhao D.3; Shan C.3; Li B.3; Shen D.3
2011-12-12
Source PublicationApplied Physics Letters
ISSN00036951
Volume99Issue:24
AbstractAn ultraviolet photodetector was fabricated on MgZnO thin film grown by metal-organic chemical vapor deposition. The peak response of the device centers at 238 nm and cutoff wavelength is 253 nm. The peak responsivity is 129 mA/W at 15 V bias, and the UV/visible reject ratio is 4 orders of magnitude. Internal gain is due to the hole trapping at interface that brings low response speed. Native defects at the Au/MgZnO interface degrade the barrier effect, which caused large dark current and high visible response. © 2011 American Institute of Physics.
DOI10.1063/1.3670334
URLView the original
Language英語
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Cited Times [WOS]:52   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Chinese Academy of Sciences
2.Changchun University of Science and Technology
3.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
4.Shenzhen University
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Han S.,Zhang Z.,Zhang J.,et al. Photoconductive gain in solar-blind ultraviolet photodetector based on Mg 0.52 Zn 0.48 O thin film[J]. Applied Physics Letters,2011,99(24).
APA Han S.,Zhang Z.,Zhang J.,Wang L.,Zheng J.,Zhao H.,Zhang Y.,Jiang M.,Wang S.,Zhao D.,Shan C.,Li B.,&Shen D..(2011).Photoconductive gain in solar-blind ultraviolet photodetector based on Mg 0.52 Zn 0.48 O thin film.Applied Physics Letters,99(24).
MLA Han S.,et al."Photoconductive gain in solar-blind ultraviolet photodetector based on Mg 0.52 Zn 0.48 O thin film".Applied Physics Letters 99.24(2011).
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