Degenerated MgZnO films obtained by excessive zinc
Liu J.S.2; Shan C.X.2; Wang S.P.2; Li B.H.2; Zhang Z.Z.2; Shen D.Z.2
Source PublicationJournal of Crystal Growth
AbstractBy introducing excessive zinc during the growth process, degenerated Mg Zn O films have been prepared. The resistivity of the Mg Zn O films is only 0.053 cm, and the electron concentration is 1.0×10 cm , which is well above the Mott concentration of ZnO (2.9×10 cm ). The origin of such a high electron concentration can be attributed to the excessive zinc in the films. The results reported in this paper provide a route to conductive degenerated MgZnO films, thus may lay a ground for the fabrication of ZnO-based heterostructures or deep ultraviolet optoelectronic devices. © 2012 Elsevier B.V.
KeywordA1. Characterization A3. Molecular beam epitaxy B2. Semiconducting II-VI materials
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Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.University of Chinese Academy of Sciences
2.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences
Recommended Citation
GB/T 7714
Liu J.S.,Shan C.X.,Wang S.P.,et al. Degenerated MgZnO films obtained by excessive zinc[J]. Journal of Crystal Growth,2012,347(1):95-98.
APA Liu J.S.,Shan C.X.,Wang S.P.,Li B.H.,Zhang Z.Z.,&Shen D.Z..(2012).Degenerated MgZnO films obtained by excessive zinc.Journal of Crystal Growth,347(1),95-98.
MLA Liu J.S.,et al."Degenerated MgZnO films obtained by excessive zinc".Journal of Crystal Growth 347.1(2012):95-98.
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