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GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate
Chuang L.C.; Sedgwick F.G.; Chen R.; Ko W.S.; Moewe M.; Ng K.W.; Tran T.-T.D.; Chang-Hasnain C.
2011-02-09
Source PublicationNano Letters
ISSN15306984 15306992
Volume11Issue:2Pages:385-390
AbstractMonolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based avalanche photodiodes (APDs) and light emitting diodes, directly grown on silicon at a very low, CMOS-compatible temperature and fabricated using conventional microfabrication techniques. The APDs exhibit an extraordinarily large multiplication factor at low voltage resulting from the unique needle shape and growth mode. © 2010 American Chemical Society.
KeywordAPD CMOS compatible III-V on Si LED Nanoneedle nanowire
DOI10.1021/nl102988w
URLView the original
Language英語
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Cited Times [WOS]:78   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of California, Berkeley
Recommended Citation
GB/T 7714
Chuang L.C.,Sedgwick F.G.,Chen R.,et al. GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate[J]. Nano Letters,2011,11(2):385-390.
APA Chuang L.C..,Sedgwick F.G..,Chen R..,Ko W.S..,Moewe M..,...&Chang-Hasnain C..(2011).GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate.Nano Letters,11(2),385-390.
MLA Chuang L.C.,et al."GaAs-based nanoneedle light emitting diode and avalanche photodiode monolithically integrated on a silicon substrate".Nano Letters 11.2(2011):385-390.
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