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Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon
Tran T.-T.D.; Chen R.; Ng K.W.; Ko W.S.; Lu F.; Chang-Hasnain C.J.
2014-09-15
Source PublicationApplied Physics Letters
ISSN00036951
Volume105Issue:11
AbstractAs-grown InGaAs nanoneedle lasers, synthesized at complementary metal-oxide-semiconductor compatible temperatures on polycrystalline and crystalline silicon substrates, were studied in photoluminescence experiments. Radiation patterns of three-dimensional whispering gallery modes were observed upon optically pumping the needles above the lasing threshold. Using the radiation patterns as well as finite-difference-time-domain simulations and polarization measurements, all modal numbers of the three-dimensional whispering gallery modes could be identified.
DOI10.1063/1.4895920
URLView the original
Language英語
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Cited Times [WOS]:9   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of California, Berkeley
Recommended Citation
GB/T 7714
Tran T.-T.D.,Chen R.,Ng K.W.,et al. Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon[J]. Applied Physics Letters,2014,105(11).
APA Tran T.-T.D.,Chen R.,Ng K.W.,Ko W.S.,Lu F.,&Chang-Hasnain C.J..(2014).Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon.Applied Physics Letters,105(11).
MLA Tran T.-T.D.,et al."Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon".Applied Physics Letters 105.11(2014).
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