UM
Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon
Ng K.W.; Ko W.S.; Chen R.; Lu F.; Tran T.-T.D.; Li K.; Chang-Hasnain C.J.
2014-10-08
Source PublicationACS Applied Materials and Interfaces
ISSN19448252 19448244
Volume6Issue:19Pages:16706-16711
AbstractAlloy composition homogeneity plays an important role in the device performance of III-V heterostructures. In this work, we study the spatial composition uniformity of n-InGaAs/i-InGaAs/p-GaAs core-shell nanopillars monolithically grown on silicon. Cross sections extracted along the axial and radial directions are examined with transmission electron microscopy and energy-dispersive X-ray spectroscopy. Interestingly, indium-deficient segments with width ~5 nm are observed to develop along the radial 1120 directions in the InGaAs layers. We attribute this spontaneous ordering to capillarity effect and difference in group-III adatom diffusion lengths. The slight fluctuation in indium content (~4%), however, does not induce any noticeable misfit defects in the pure wurtzite-phased crystal. In contrast, the heterostructure exhibits excellent alloy composition uniformity along the axial [0001] direction. Furthermore, abrupt transitions of gallium and indium are seen at the heterointerfaces. These remarkable properties give rise to extraordinary optical performances. Lasing is achieved in the core-shell nanopillars upon optical pump despite the observed alloy composition fluctuation in the radial directions. The results here reveal the potential of the InGaAs-based core-shell heterostructures as efficient optoelectronic devices and high-speed heterojunction transistors directly integrated on silicon.
Keywordalloy ordering core-shell III-V nanopillar laser nanowire
DOI10.1021/am503676c
URLView the original
Language英語
Fulltext Access
Citation statistics
Cited Times [WOS]:6   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of California, Berkeley
Recommended Citation
GB/T 7714
Ng K.W.,Ko W.S.,Chen R.,et al. Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon[J]. ACS Applied Materials and Interfaces,2014,6(19):16706-16711.
APA Ng K.W..,Ko W.S..,Chen R..,Lu F..,Tran T.-T.D..,...&Chang-Hasnain C.J..(2014).Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon.ACS Applied Materials and Interfaces,6(19),16706-16711.
MLA Ng K.W.,et al."Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon".ACS Applied Materials and Interfaces 6.19(2014):16706-16711.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Ng K.W.]'s Articles
[Ko W.S.]'s Articles
[Chen R.]'s Articles
Baidu academic
Similar articles in Baidu academic
[Ng K.W.]'s Articles
[Ko W.S.]'s Articles
[Chen R.]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Ng K.W.]'s Articles
[Ko W.S.]'s Articles
[Chen R.]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.