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Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes
Zhu B.1; Tan S.T.1; Liu W.1; Lu S.1; Zhang Y.1; Chen S.1; Hasanov N.1; Kang X.1; Demir H.V.1
2016-06-01
Source PublicationIEEE Photonics Journal
ISSN19430655
Volume8Issue:3
AbstractWe report the improved performance of InGaN/GaN-based light-emitting diodes (LEDs) through the design and the formation of the InGaNO interfacial layer, which maintains high reflectivity of silver and forms good ohmic contact between pristine silver and p-GaN. The interfacial layer was designed and formed by depositing a thin layer of indium tin oxide (ITO) on top of p-GaN, followed by thermal annealing, to enable the interdiffusion and the intermixing of In, Sn, Ga, O, and N atoms. Both electrical and optical performances of the LED with the optimized InGaNO interfacial layer are improved, thus achieving the highest wall-plug efficiency, compared with those LEDs with and without ITO layers at operation current.
KeywordInGaxNyOz interfacial layer ITO LED ohmic contact
DOI10.1109/JPHOT.2016.2570422
URLView the original
Language英語
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Cited Times [WOS]:2   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.Nanyang Technological University
2.Bilkent Üniversitesi
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GB/T 7714
Zhu B.,Tan S.T.,Liu W.,et al. Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes[J]. IEEE Photonics Journal,2016,8(3).
APA Zhu B.,Tan S.T.,Liu W.,Lu S.,Zhang Y.,Chen S.,Hasanov N.,Kang X.,&Demir H.V..(2016).Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes.IEEE Photonics Journal,8(3).
MLA Zhu B.,et al."Modulating Ohmic Contact Through InGaxNyOz Interfacial Layer for High-Performance InGaN/GaN-Based Light-Emitting Diodes".IEEE Photonics Journal 8.3(2016).
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