Lasing in GaN microdisks pivoted on Si
Choi H.W.2; Hui K.N.2; Lai P.T.2; Chen P.1; Zhang X.H.1; Tripathy S.1; Teng J.H.1; Chua S.J.1
Source PublicationApplied Physics Letters
AbstractArrays of pivoted GaN microdisks have been fabricated on a GaNSi material by a combination of dry and wet etching. The Si material beneath the GaN microdisks is removed by wet etching, leaving behind a fine pillar to support the disks. Raman spectroscopy reveals substantial strain relaxation in these structures. Resonant modes, corresponding to whispering gallery modes, are observed in the photoluminescence spectra. Stimulated emission is achieved at higher optical pumping intensities. © 2006 American Institute of Physics.
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Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.A-Star, Institute of Materials Research and Engineering
2.The University of Hong Kong
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GB/T 7714
Choi H.W.,Hui K.N.,Lai P.T.,et al. Lasing in GaN microdisks pivoted on Si[J]. Applied Physics Letters,2006,89(21).
APA Choi H.W.,Hui K.N.,Lai P.T.,Chen P.,Zhang X.H.,Tripathy S.,Teng J.H.,&Chua S.J..(2006).Lasing in GaN microdisks pivoted on Si.Applied Physics Letters,89(21).
MLA Choi H.W.,et al."Lasing in GaN microdisks pivoted on Si".Applied Physics Letters 89.21(2006).
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