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Optically pumped ultraviolet lasing from nitride nanopillars at room temperature
Chen R.2; Sun H.D.2; Wang T.3; Hui K.N.1; Choi H.W.1
2010-06-14
Source PublicationApplied Physics Letters
ISSN00036951
Volume96Issue:24
AbstractA vertical cavity structure composing of an in situ grown bottom Al Ga N/Al Ga N distributed Bragg reflector and a top SiO / HfO dielectric mirror for ultraviolet (UV) emission has been demonstrated. Close-packed nanopillars with diameters of around 500 nm have been achieved by the route of nanosphere lithography combined with inductively-coupled plasma etching. Optically-pumped UV lasing at a wavelength of 343.7 nm (3.608 eV) was observed at room temperature, with a threshold excitation density of 0.52 MW/ cm. The mechanism of the lasing action is discussed in detail. Our investigation indicates promising possibilities in nitride-based resonant cavity devices, particularly toward realizing the UV nitride-based vertical-cavity surface-emitting laser. © 2010 American Institute of Physics.
DOI10.1063/1.3449576
URLView the original
Language英語
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Cited Times [WOS]:49   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
Affiliation1.The University of Hong Kong
2.Nanyang Technological University
3.University of Sheffield
Recommended Citation
GB/T 7714
Chen R.,Sun H.D.,Wang T.,et al. Optically pumped ultraviolet lasing from nitride nanopillars at room temperature[J]. Applied Physics Letters,2010,96(24).
APA Chen R.,Sun H.D.,Wang T.,Hui K.N.,&Choi H.W..(2010).Optically pumped ultraviolet lasing from nitride nanopillars at room temperature.Applied Physics Letters,96(24).
MLA Chen R.,et al."Optically pumped ultraviolet lasing from nitride nanopillars at room temperature".Applied Physics Letters 96.24(2010).
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