| Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE | |
| Lu Y.M.3; Wang X.3; Zhang Z.Z.3; Shen D.Z.3; Su S.C.3; Yao B.3; Li B.H.3; Zhang J.Y.3; Zhao D.X.3; Fan X.W.3; Tang Z.K.2 | |
| 2007-04-01 | |
| Source Publication | Journal of Crystal Growth
 |
| ISSN | 00220248 |
| Volume | 301-302Issue:SPEC. ISS.Pages:373-377 |
| Abstract | The undoped ZnO thin films grown on Si (1 1 1) substrates by plasma-assisted molecular beam epitaxy (P-MBE) were reported. The effects of growth temperature, the thickness of low temperature ZnO buffer layer and Zn/O ratio on the quality of high-temperature-overgrown ZnO main layer were studied by atomic force microscopy (AFM), X-ray diffraction (XRD) and room-temperature photoluminescence (PL) spectra. These results showed that it was difficult to directly obtain high quality ZnO films on Si substrate. By introducing a thin ZnO buffer layer at 350 °C, c-axis preferred orientation ZnO films with improved optical properties were obtained at 750 °C. However, the thickness of ZnO buffer layer and Zn/O ratio in the ZnO main layer greatly influenced the quality of high-temperature-overgrown ZnO main layer. © 2007 Elsevier B.V. All rights reserved. |
| Keyword | A1. Atomic force microscopy A1. Photoluminescence A1. X-ray diffraction A3. Molecular beam epitaxy B1. Zinc oxide |
| DOI | 10.1016/j.jcrysgro.2006.11.302 |
| URL | View the original |
| Language | 英語 |
| Fulltext Access | |
| Citation statistics | |
| Document Type | Journal article |
| Collection | University of Macau |
| Affiliation | 1.University of Chinese Academy of Sciences 2.Hong Kong University of Science and Technology 3.Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Sciences |
| Recommended Citation GB/T 7714 | Lu Y.M.,Wang X.,Zhang Z.Z.,et al. Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE[J]. Journal of Crystal Growth,2007,301-302(SPEC. ISS.):373-377. |
| APA | Lu Y.M..,Wang X..,Zhang Z.Z..,Shen D.Z..,Su S.C..,...&Tang Z.K..(2007).Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE.Journal of Crystal Growth,301-302(SPEC. ISS.),373-377. |
| MLA | Lu Y.M.,et al."Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE".Journal of Crystal Growth 301-302.SPEC. ISS.(2007):373-377. |
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