UM
Graphene magnetoresistance device in van der pauw geometry
Lu J.; Zhang H.; Shi W.; Wang Z.; Zheng Y.; Zhang T.; Wang N.; Tang Z.; Sheng P.
2011-07-13
Source PublicationNano Letters
ISSN15306984 15306992
Volume11Issue:7Pages:2973-2977
AbstractWe have fabricated extraordinary magnetoresistance (EMR) device, comprising a monolayer graphene with an embedded metallic disk, that exhibits large room temperature magnetoresistance (MR) enhancement of up to 55000% at 9 T. Finite element simulations yield predictions in excellent agreement with the experiment and show possibility for even better performance. Simplicity, ease of implementation and high sensitivity of this device imply great potential for practical applications. © 2011 American Chemical Society.
Keywordextraordinary magnetoresistance finite element simulations Graphene magnetoresistance sensitivity
DOI10.1021/nl201538m
URLView the original
Language英語
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Cited Times [WOS]:39   [WOS Record]     [Related Records in WOS]
Document TypeJournal article
CollectionUniversity of Macau
AffiliationHong Kong University of Science and Technology, William Mong Institute of Nano Science & Technology
Recommended Citation
GB/T 7714
Lu J.,Zhang H.,Shi W.,et al. Graphene magnetoresistance device in van der pauw geometry[J]. Nano Letters,2011,11(7):2973-2977.
APA Lu J.,Zhang H.,Shi W.,Wang Z.,Zheng Y.,Zhang T.,Wang N.,Tang Z.,&Sheng P..(2011).Graphene magnetoresistance device in van der pauw geometry.Nano Letters,11(7),2973-2977.
MLA Lu J.,et al."Graphene magnetoresistance device in van der pauw geometry".Nano Letters 11.7(2011):2973-2977.
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