A modular approach for high Q microwave CMOS Active Inductor design
Chiang K.H.; Chiang K.V.; Lam K.F.; Choi W.W.; Tarn K.W.; Martins R.
2000-12-01
Conference Name7th IEEE International Conference on Electronics, Circuits and Systems
Source PublicationProceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume1
Pages41-44
Conference DateDEC 17-19, 2000
Conference PlaceJOUNIEH, LEBANON
CountryChina
Author of SourceIEEE
Publication PlaceJOUNIEH, LEBANON
PublisherLEBANON
Abstract

In this paper, a modular approach for the L-band CMOS Active Inductor (Al) is proposed and designed based upon a connection in series of conventional low Q-factor gyrator-C basic cells. The Q-factor can then be tuned by the number of Al cells in order to offer simplicity in terms of pole/zero cancellation, while maintaining in each gyrator-C inductor cell low values of the Q. In order to demonstrate the proposed architecture usefulness, a prototype L-band active inductor is designed in a 0.6μm CMOS process. The simulated results show that a high Q value of 972 is obtained @2GHz and an average Q-factor value of 200 is also achieved in the frequency range of 1 -2GHz. © 2000 IEEE.

DOI10.1109/ICECS.2000.911480
URLView the original
Language英语
WOS Research AreaComputer Science ; Engineering
WOS SubjectComputer Science, Artificial Intelligence ; Computer Science, Interdisciplinary Applications ; Computer Science, Theory & Methods ; Engineering, Electrical & Electronic
WOS IDWOS:000167666700010
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Cited Times [WOS]:1   [WOS Record]     [Related Records in WOS]
Document TypeConference paper
CollectionDEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
AffiliationUniversidade de Macau
First Author AffilicationUniversity of Macau
Recommended Citation
GB/T 7714
Chiang K.H.,Chiang K.V.,Lam K.F.,et al. A modular approach for high Q microwave CMOS Active Inductor design[C]//IEEE. JOUNIEH, LEBANON:LEBANON,2000:41-44.
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