A review and design of the on-chip rectifiers for RF energy harvesting
Haojuan Dai1; Yan Lu1; Man-Kay Law1; Sai-Weng Sin1; Seng-Pan U1,2; R. P. Martins1,3
Conference NameIEEE International Wireless Symposium (IWS)
Source Publication2015 IEEE International Wireless Symposium (IWS 2015)
Conference DateMAR 30-APR 01, 2015
Conference PlaceShenzhen, PEOPLES R CHINA

This paper presents an overview of the CMOS on-chip rectifiers for RF energy harvesting in the RFID, internet of things, or wearable device applications. The pros and cons of different RF to DC rectifier topologies are investigated, compared, and summarized. All the topologies are designed and optimized in a 65nm CMOS process, with the input power range from -10dBm to 4dBm and the load resistor range from 10kω to 1Mω. The simulated results show that the cross-connected (CC) topology exhibits the highest achievable power conversion efficiency up to 65% (rectifier only), while the CC topology with the threshold voltage cancellation technique and the MOS diode topology achieve 46.7% and 51%, respectively.

KeywordRf Energy Harvesting Cmos Rectifier Wireless Power Power Converter Rf-dc Ultra-high Frequency (Uhf)
URLView the original
Indexed BySCIE
WOS Research AreaEngineering ; Telecommunications
WOS SubjectEngineering, Electrical & Electronic ; Telecommunications
WOS IDWOS:000380517600135
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Cited Times [WOS]:24   [WOS Record]     [Related Records in WOS]
Document TypeConference paper
Faculty of Science and Technology
Affiliation1.State Key Laboratory of Analog and Mixed-Signal VLSI and Faculty of Science and Technology, University of Macau, Macao, China
2.Also with Synopsys Macau Ltd.
3.On leave from Instituto Superior Técnico, Universidade de Lisboa, Portugal
First Author AffilicationFaculty of Science and Technology
Recommended Citation
GB/T 7714
Haojuan Dai,Yan Lu,Man-Kay Law,et al. A review and design of the on-chip rectifiers for RF energy harvesting[C],2015.
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