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| Experimental Verifications of Low Frequency Path Gain (PG) Channel Modeling for Implantable Medical Device (IMD) Journal article
IEEE Access, 2019,Volume: 7,Page: 11934-11945
Authors: Zhang S.; Pun S.-H.; Mak P.U.; Qin Y.P.; Liu Y.H.; Gao Y.M.; Vai M.I.
  Favorite | View/Download：13/0 | TC[WOS]:2 TC[Scopus]:5 | Submit date：2019/03/01
galvanic coupling intra-body communication Implantable communication implantable medical device (IMD) Poisson's equation volume conductor theory |
| Rat CC chemokine receptor 4 is the functional homologue of human CC chemokine receptor 4 and can interact with human CCL17 and CCL22 Journal article
Chinese Science Bulletin, 2010,Volume: 55,Issue: 14,Page: 1388-1395
Authors: Tian L.J.; Qi H.; Xie Y.; Zhang Y.M.; Zhang W.J.; Sun X.Y.; Wang Y.; Ma D.L.
Favorite | View/Download：9/0 | TC[WOS]:0 TC[Scopus]:0 | Submit date：2019/01/16
CCL17 CCL22 CCR4 Cross-species interaction Rat |
| Degenerate layer at ZnO/sapphire interface Journal article
Journal of Physics D: Applied Physics, 2009,Volume: 42,Issue: 19
Authors: Li L.; Shan C.X.; Wang S.P.; Li B.H.; Zhang J.Y.; Yao B.; Shen D.Z.; Fan X.W.; Lu Y.M.
Favorite | View/Download：4/0 | TC[WOS]:6 TC[Scopus]:6 | Submit date：2019/04/08 |
| Recombinant human PDCD5 protein enhances chemosensitivities of hematologic malignancies Journal article
Chinese Science Bulletin, 2009,Volume: 54,Issue: 21,Page: 3981-3989
Authors: Wang Y.F.; Shi L.; Song Q.S.; Zhang Y.M.; Lou Y.X.; Zheng Y.; Ma D.L.; Wang Y.; Ke X.Y.
Favorite | View/Download：9/0 | TC[WOS]:8 TC[Scopus]:9 | Submit date：2019/01/16
Apoptosis Chemosensitivity Chemotherapy Hematologic malignancies PDCD5 |
| Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors Conference paper
Journal of the Korean Physical Society
Authors: Wei Z.P.; Yao B.; Li Y.F.; Shen D.Z.; Lu Y.M.; Zhang Z.Z.; Li B.H.; Zheng C.J.; Wang X.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
Favorite | View/Download：9/0 | TC[WOS]:0 TC[Scopus]:0 | Submit date：2019/04/08
N doping P-MBE ZnMgO/ZnO p-n junction |
| Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire Conference paper
Journal of the Korean Physical Society
Authors: Wei Z.P.; Lu Y.M.; Shen D.Z.; Zhang Z.Z.; Yao B.; Li B.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
Favorite | View/Download：13/0 | TC[WOS]:0 TC[Scopus]:0 | Submit date：2019/04/08
Electroluminescence LED P-MBE P-type ZnO |
| Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content Journal article
Applied Physics Letters, 2007,Volume: 91,Issue: 23
Authors: Li Y.F.; Yao B.; Lu Y.M.; Wei Z.P.; Gai Y.Q.; Zheng C.J.; Zhang Z.Z.; Li B.H.; Shen D.Z.; Fan X.W.; Tang Z.K.
Favorite | View/Download：9/0 | TC[WOS]:53 TC[Scopus]:64 | Submit date：2019/04/08 |
| Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films Journal article
Journal of Materials Research, 2007,Volume: 22,Issue: 10,Page: 2791-2795
Authors: Wei Z.P.; Yao B.; Wang X.H.; Zhang Z.Z.; Lu Y.M.; Shen D.Z.; Li B.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
Favorite | View/Download：6/0 | TC[WOS]:6 TC[Scopus]:6 | Submit date：2019/04/08 |
| Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 373-377
Authors: Lu Y.M.; Wang X.; Zhang Z.Z.; Shen D.Z.; Su S.C.; Yao B.; Li B.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
Favorite | View/Download：4/0 | TC[WOS]:20 TC[Scopus]:21 | Submit date：2019/04/08
A1. Atomic force microscopy A1. Photoluminescence A1. X-ray diffraction A3. Molecular beam epitaxy B1. Zinc oxide |
| p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 362-365
Authors: Zhang Z.Z.; Wei Z.P.; Lu Y.M.; Shen D.Z.; Yao B.; Li B.H.; Zhao D.X.; Zhang J.Y.; Fan X.W.; Tang Z.K.
Favorite | View/Download：7/0 | TC[WOS]:25 TC[Scopus]:27 | Submit date：2019/04/08
A3. Molecular beam epitaxy B2. Semiconducting II-VI materials B3. Light-emitting diodes |
