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Experimental Verifications of Low Frequency Path Gain (PG) Channel Modeling for Implantable Medical Device (IMD) Journal article
IEEE Access, 2019,Volume: 7,Page: 11934-11945
Authors:  Zhang S.;  Pun S.-H.;  Mak P.U.;  Qin Y.P.;  Liu Y.H.;  Gao Y.M.;  Vai M.I.
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galvanic coupling intra-body communication  Implantable communication  implantable medical device (IMD)  Poisson's equation  volume conductor theory  
Rat CC chemokine receptor 4 is the functional homologue of human CC chemokine receptor 4 and can interact with human CCL17 and CCL22 Journal article
Chinese Science Bulletin, 2010,Volume: 55,Issue: 14,Page: 1388-1395
Authors:  Tian L.J.;  Qi H.;  Xie Y.;  Zhang Y.M.;  Zhang W.J.;  Sun X.Y.;  Wang Y.;  Ma D.L.
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CCL17  CCL22  CCR4  Cross-species interaction  Rat  
Degenerate layer at ZnO/sapphire interface Journal article
Journal of Physics D: Applied Physics, 2009,Volume: 42,Issue: 19
Authors:  Li L.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.;  Yao B.;  Shen D.Z.;  Fan X.W.;  Lu Y.M.
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Recombinant human PDCD5 protein enhances chemosensitivities of hematologic malignancies Journal article
Chinese Science Bulletin, 2009,Volume: 54,Issue: 21,Page: 3981-3989
Authors:  Wang Y.F.;  Shi L.;  Song Q.S.;  Zhang Y.M.;  Lou Y.X.;  Zheng Y.;  Ma D.L.;  Wang Y.;  Ke X.Y.
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Apoptosis  Chemosensitivity  Chemotherapy  Hematologic malignancies  PDCD5  
Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors Conference paper
Journal of the Korean Physical Society
Authors:  Wei Z.P.;  Yao B.;  Li Y.F.;  Shen D.Z.;  Lu Y.M.;  Zhang Z.Z.;  Li B.H.;  Zheng C.J.;  Wang X.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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N doping  P-MBE  ZnMgO/ZnO p-n junction  
Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire Conference paper
Journal of the Korean Physical Society
Authors:  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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Electroluminescence  LED  P-MBE  P-type ZnO  
Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content Journal article
Applied Physics Letters, 2007,Volume: 91,Issue: 23
Authors:  Li Y.F.;  Yao B.;  Lu Y.M.;  Wei Z.P.;  Gai Y.Q.;  Zheng C.J.;  Zhang Z.Z.;  Li B.H.;  Shen D.Z.;  Fan X.W.;  Tang Z.K.
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Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films Journal article
Journal of Materials Research, 2007,Volume: 22,Issue: 10,Page: 2791-2795
Authors:  Wei Z.P.;  Yao B.;  Wang X.H.;  Zhang Z.Z.;  Lu Y.M.;  Shen D.Z.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 373-377
Authors:  Lu Y.M.;  Wang X.;  Zhang Z.Z.;  Shen D.Z.;  Su S.C.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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A1. Atomic force microscopy  A1. Photoluminescence  A1. X-ray diffraction  A3. Molecular beam epitaxy  B1. Zinc oxide  
p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 362-365
Authors:  Zhang Z.Z.;  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Yao B.;  Li B.H.;  Zhao D.X.;  Zhang J.Y.;  Fan X.W.;  Tang Z.K.
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A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  B3. Light-emitting diodes