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ZnO-based ultraviolet avalanche photodetectors Journal article
Journal of Physics D: Applied Physics, 2013,Volume: 46,Issue: 30
Authors:  Yu J.;  Shan C.X.;  Huang X.M.;  Zhang X.W.;  Wang S.P.;  Shen D.Z.
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Stability analysis of a parallel higher order basis based integral equation solver (HOBBIES) on a cluster with 512 AMD CPU cores Conference paper
Proceedings of the 5th European Conference on Antennas and Propagation, EUCAP 2011
Authors:  Zhang Y.;  Zhao H.;  Ting S.W.;  Garcia-Donoro D.;  Zhao X.W.;  Salazar-Palma M.;  Sarkar T.K.
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matrix equation solving  matrix filling  stability  
Parallel higher order method of moments for accurate analysis of antenna-radome-platform system Conference paper
Proceedings of the 5th European Conference on Antennas and Propagation, EUCAP 2011
Authors:  Zhao X.W.;  Zhang Y.;  Garcia-Donoro D.;  Sarkar T.K.;  Ting S.W.
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antenna-radome-missile  parallel higher order method of moments  radiation characteristics  
On the origin of intrinsic donors in ZnO Journal article
Applied Surface Science, 2010,Volume: 256,Issue: 11,Page: 3390-3393
Authors:  Sun F.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.;  Zhang Z.Z.;  Zhao D.X.;  Yao B.;  Shen D.Z.;  Fan X.W.
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Carrier concentration  Hall measurement  Intrinsic donors  Zinc oxide  
Expression of IL-1 mRNA in the dentate gyrus of adult rats following lithium-pilocarione-induced seizures Journal article
Xi bao yu fen zi mian yi xue za zhi = Chinese journal of cellular and molecular immunology, 2010,Volume: 26,Issue: 3,Page: 288-290
Authors:  Zhang S.J.;  Li X.W.;  Wang Y.;  Wei D.;  Jiang W.
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Degenerate layer at ZnO/sapphire interface Journal article
Journal of Physics D: Applied Physics, 2009,Volume: 42,Issue: 19
Authors:  Li L.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.;  Yao B.;  Shen D.Z.;  Fan X.W.;  Lu Y.M.
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A facile route to arsenic-doped p-type ZnO films Journal article
Journal of Crystal Growth, 2009,Volume: 311,Issue: 14,Page: 3577-3580
Authors:  Wang S.P.;  Shan C.X.;  Li B.H.;  Zhang J.Y.;  Yao B.;  Shen D.Z.;  Fan X.W.
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A1. Diffusion  A1. Doping  A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  
Electrical and optical properties of ZnO films grown by molecular beam epitaxy Journal article
Applied Surface Science, 2009,Volume: 255,Issue: 9,Page: 4913-4915
Authors:  Wang S.P.;  Shan C.X.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Shen D.Z.;  Fan X.W.
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Grain boundary  Hall mobility  Molecular beam epitaxy  Zinc oxide  
Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors Conference paper
Journal of the Korean Physical Society
Authors:  Wei Z.P.;  Yao B.;  Li Y.F.;  Shen D.Z.;  Lu Y.M.;  Zhang Z.Z.;  Li B.H.;  Zheng C.J.;  Wang X.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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N doping  P-MBE  ZnMgO/ZnO p-n junction  
Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire Conference paper
Journal of the Korean Physical Society
Authors:  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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Electroluminescence  LED  P-MBE  P-type ZnO