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High brightness InP micropillars grown on silicon with fermi level splitting larger than 1 eV Journal article
Nano Letters, 2014,Volume: 14,Issue: 6,Page: 3235-3240
Authors:  Tran T.-T.D.;  Sun H.;  Ng K.W.;  Ren F.;  Li K.;  Lu F.;  Yablonovitch E.;  Chang-Hasnain C.J.
Favorite | View/Download:6/0 | TC[WOS]:17 TC[Scopus]:17 | Submit date:2019/04/08
III-V on Si  Micropillars  nanowires  photoluminescence  photovoltaics  solar cells  
High brightness InP micropillars grown on silicon with Fermi-level splits larger than 1 eV Conference paper
Conference Record of the IEEE Photovoltaic Specialists Conference
Authors:  Tran T.;  Sun H.;  Ren F.;  Ng K.W.;  Li K.;  Lu F.;  Yablonovitch E.;  Chang-Hasnain C.J.
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III-V Semiconductor Materials  Indium Phosphide  Photoluminescence  Silicon