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Direct current field adjustable ferroelectric behaviour in (Pb, Nb) (Zr, Sn, Ti)O3 antiferroelectric thin films Journal article
Journal of Physics Condensed Matter, 2003,Volume: 15,Issue: 6,Page: 963-969
Authors:  Zhai J.;  Chen H.;  Colla E.V.;  Wu T.B.
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Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process Journal article
Applied Physics Letters, 2002,Volume: 81,Issue: 19,Page: 3621-3623
Authors:  Jiwei Z.;  Cheung M.H.;  Xu Z.K.;  Li X.;  Chen H.;  Colla E.V.;  Wu T.B.
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Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process Journal article
Journal of Applied Physics, 2002,Volume: 92,Issue: 7,Page: 3990-3994
Authors:  Zhai J.;  Yao Y.;  Li X.;  Hung T.F.;  Xu Z.K.;  Chen H.;  Colla E.V.;  Wu T.B.
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Electrical characteristics of 25 nm Pr(ZrTi)O3 thin films grown on Si by metalorganic chemical vapor deposition Journal article
Journal of Applied Physics, 2000,Volume: 88,Issue: 4,Page: 2157-2159
Authors:  Lin C.H.;  Friddle P.A.;  Lu X.;  Chen H.;  Kim Y.;  Wu T.B.
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Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition Journal article
Journal of Materials Research, 2000,Volume: 15,Issue: 1,Page: 115-124
Authors:  Lin C.H.;  Yen B.M.;  Kuo H.C.;  Chen H.;  Wu T.B.;  Stillman G.E.
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Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si Journal article
Applied Physics Letters, 1999,Volume: 75,Issue: 16,Page: 2485-2487
Authors:  Lin C.H.;  Lee S.W.;  Chen H.;  Wu T.B.
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Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD Conference paper
Materials Research Society Symposium - Proceedings
Authors:  Lin C.H.;  Yen B.M.;  Chen H.;  Wu T.B.;  Kuo H.C.;  Stillman G.E.
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