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A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power Journal article
IEEE Transactions on Microwave Theory and Techniques, 2016,Volume: 64,Issue: 1,Page: 200-209
Authors:  U. R. Jagadheswaran;  Harikrishnan Ramiah;  Pui-In Mak;  Rui P. Martins
Favorite | View/Download:9/0 | TC[WOS]:11 TC[Scopus]:0 | Submit date:2019/02/11
Adjacent Channel Leakage Ratio (Aclr)  Error Vector Magnitude (Evm)  Gallium-arsenide (Gaas)  Long-term Evolution (Lte)  Power Amplifier (Pa)  Power-added Efficiency (Pae)  Quadrature Amplitude Modulation (Qam)