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Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition Journal article
Journal of Materials Research, 2000,Volume: 15,Issue: 1,Page: 115-124
Authors:  Lin C.H.;  Yen B.M.;  Kuo H.C.;  Chen H.;  Wu T.B.;  Stillman G.E.
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Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer Conference paper
Materials Research Society Symposium - Proceedings
Authors:  Kuo H.C.;  Lin C.H.;  Moser B.C.;  Hsia H.;  Tang Z.;  Chen H.;  Feng M.;  Stillman G.E.
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Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD Journal article
Materials Research Society Symposium - Proceedings, 1999,Volume: 541,Page: 679-684
Authors:  Lin C.H.;  Kuo H.C.;  Stillman G.E.;  Chen H.
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Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy Journal article
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1998,Volume: 16,Issue: 3,Page: 1377-1380
Authors:  Kuo H.C.;  Thomas S.;  Norton T.U.;  Moser B.G.;  Stillman G.E.;  Lin C.H.;  Chen H.
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Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD Conference paper
Materials Research Society Symposium - Proceedings
Authors:  Lin C.H.;  Yen B.M.;  Chen H.;  Wu T.B.;  Kuo H.C.;  Stillman G.E.
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GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates Journal article
Applied Physics Letters, 1997,Volume: 71,Issue: 1,Page: 78-80
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Li J.;  Horton T.;  Curtis A.P.;  Hsieh K.C.;  Chuang S.L.;  Chen H.;  Feng M.;  Stillman G.E.;  Li L.;  Liu H.C.;  Bandara K.M.S.V.;  Gunapala S.D.;  Wang W.I.
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Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing Journal article
Applied Physics Letters, 1997,Volume: 70,Issue: 26,Page: 3573-3575
Authors:  Sengupta D.K.;  Horton T.;  Fang W.;  Curtis A.;  Li J.;  Chuang S.L.;  Chen H.;  Feng M.;  Stillman G.E.;  Kar A.;  Mazumder J.;  Li L.;  Liu H.C.
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Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy Conference paper
Materials Research Society Symposium - Proceedings
Authors:  Kuo H.C.;  Thomas S.;  Curtis A.P.;  Stillman G.E.;  Lin C.H.;  Chen H.
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Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 8,Page: 944-948
Authors:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.;  Stillman G.E.
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AlInP/GaAs  Band offset  GaInP/GaAs  Gas source molecular beam epitaxy (GSMBE)  Photoluminescence (PL)  Photoluminescence excitation (PLE)  Three-band Kane  
Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 8,Page: 944-948
Authors:  Kuo H.C.;  Kuo J.M.;  Wang Y.C.;  Lin C.H.;  Chen H.;  Stillman G.E.
Favorite  |  View/Download:0/0  |  Submit date:2019/04/08
AlInP/GaAs  Band offset  GaInP/GaAs  Gas source molecular beam epitaxy (GSMBE)  Photoluminescence (PL)  Photoluminescence excitation (PLE)  Three-band Kane