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| Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition Journal article
Journal of Materials Research, 2000,Volume: 15,Issue: 1,Page: 115-124
Authors: Lin C.H.; Yen B.M.; Kuo H.C.; Chen H.; Wu T.B.; Stillman G.E.
  Favorite | View/Download：9/0 | TC[WOS]:10 TC[Scopus]:9 | Submit date：2019/04/08 |
| Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer Conference paper
Materials Research Society Symposium - Proceedings
Authors: Kuo H.C.; Lin C.H.; Moser B.C.; Hsia H.; Tang Z.; Chen H.; Feng M.; Stillman G.E.
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| Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD Journal article
Materials Research Society Symposium - Proceedings, 1999,Volume: 541,Page: 679-684
Authors: Lin C.H.; Kuo H.C.; Stillman G.E.; Chen H.
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| Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy Journal article
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1998,Volume: 16,Issue: 3,Page: 1377-1380
Authors: Kuo H.C.; Thomas S.; Norton T.U.; Moser B.G.; Stillman G.E.; Lin C.H.; Chen H.
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| Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD Conference paper
Materials Research Society Symposium - Proceedings
Authors: Lin C.H.; Yen B.M.; Chen H.; Wu T.B.; Kuo H.C.; Stillman G.E.
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| GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates Journal article
Applied Physics Letters, 1997,Volume: 71,Issue: 1,Page: 78-80
Authors: Sengupta D.K.; Fang W.; Malin J.I.; Li J.; Horton T.; Curtis A.P.; Hsieh K.C.; Chuang S.L.; Chen H.; Feng M.; Stillman G.E.; Li L.; Liu H.C.; Bandara K.M.S.V.; Gunapala S.D.; Wang W.I.
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| Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing Journal article
Applied Physics Letters, 1997,Volume: 70,Issue: 26,Page: 3573-3575
Authors: Sengupta D.K.; Horton T.; Fang W.; Curtis A.; Li J.; Chuang S.L.; Chen H.; Feng M.; Stillman G.E.; Kar A.; Mazumder J.; Li L.; Liu H.C.
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| Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy Conference paper
Materials Research Society Symposium - Proceedings
Authors: Kuo H.C.; Thomas S.; Curtis A.P.; Stillman G.E.; Lin C.H.; Chen H.
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| Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD Conference paper
Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
Authors: Yang Q.; Hartmann Q.J.; Curtis A.P.; Lin C.; Ahmari D.A.; Scott D.; Kuo H.C.; Chen H.; Stillman G.E.
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| Determination of the band offset of GaInP-GaAs and AlInP-GaAs quantum wells by optical spectroscopy Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 8,Page: 944-948
Authors: Kuo H.C.; Kuo J.M.; Wang Y.C.; Lin C.H.; Chen H.; Stillman G.E.
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AlInP/GaAs Band offset GaInP/GaAs Gas source molecular beam epitaxy (GSMBE) Photoluminescence (PL) Photoluminescence excitation (PLE) Three-band Kane |
