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High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process Journal article
Optics Express, 2015,Volume: 23,Issue: 10,Page: 13554-13561
Authors:  Hu G.C.;  Shan C.X.;  Zhang N.;  Jiang M.M.;  Wang S.P.;  Shen D.Z.
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ZnO-based ultraviolet avalanche photodetectors Journal article
Journal of Physics D: Applied Physics, 2013,Volume: 46,Issue: 30
Authors:  Yu J.;  Shan C.X.;  Huang X.M.;  Zhang X.W.;  Wang S.P.;  Shen D.Z.
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Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer Journal article
Applied Physics Letters, 2013,Volume: 102,Issue: 23
Authors:  Xie X.H.;  Zhang Z.Z.;  Li B.H.;  Wang S.P.;  Jiang M.M.;  Shan C.X.;  Zhao D.X.;  Chen H.Y.;  Shen D.Z.
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P-type conductivity in N-doped ZnO: The role of the N Zn-V O complex Journal article
Physical Review Letters, 2012,Volume: 108,Issue: 21
Authors:  Liu L.;  Xu J.;  Wang D.;  Jiang M.;  Wang S.;  Li B.;  Zhang Z.;  Zhao D.;  Shan C.-X.;  Yao B.;  Shen D.Z.
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Degenerated MgZnO films obtained by excessive zinc Journal article
Journal of Crystal Growth, 2012,Volume: 347,Issue: 1,Page: 95-98
Authors:  Liu J.S.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang Z.Z.;  Shen D.Z.
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A1. Characterization  A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  
A route to single-crystalline ZnO films with low residual electron concentration Journal article
Journal of Crystal Growth, 2010,Volume: 312,Issue: 20,Page: 2861-2864
Authors:  Liu J.S.;  Shan C.X.;  Wang S.P.;  Sun F.;  Yao B.;  Shen D.Z.
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A1. X-ray diffraction  A3. Molecular beam epitaxy  B1. Zinc compounds  B2. Semiconducting II-VI materials  
On the origin of intrinsic donors in ZnO Journal article
Applied Surface Science, 2010,Volume: 256,Issue: 11,Page: 3390-3393
Authors:  Sun F.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.;  Zhang Z.Z.;  Zhao D.X.;  Yao B.;  Shen D.Z.;  Fan X.W.
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Carrier concentration  Hall measurement  Intrinsic donors  Zinc oxide  
Degenerate layer at ZnO/sapphire interface Journal article
Journal of Physics D: Applied Physics, 2009,Volume: 42,Issue: 19
Authors:  Li L.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.;  Yao B.;  Shen D.Z.;  Fan X.W.;  Lu Y.M.
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A facile route to arsenic-doped p-type ZnO films Journal article
Journal of Crystal Growth, 2009,Volume: 311,Issue: 14,Page: 3577-3580
Authors:  Wang S.P.;  Shan C.X.;  Li B.H.;  Zhang J.Y.;  Yao B.;  Shen D.Z.;  Fan X.W.
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A1. Diffusion  A1. Doping  A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  
Electrical and optical properties of ZnO films grown by molecular beam epitaxy Journal article
Applied Surface Science, 2009,Volume: 255,Issue: 9,Page: 4913-4915
Authors:  Wang S.P.;  Shan C.X.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Shen D.Z.;  Fan X.W.
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Grain boundary  Hall mobility  Molecular beam epitaxy  Zinc oxide