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Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon Journal article
Scientific Reports, 2016,Volume: 6
Authors:  Ko W.S.;  Bhattacharya I.;  Tran T.-T.D.;  Ng K.W.;  Adair Gerke S.;  Chang-Hasnain C.
Favorite | View/Download:8/0 | TC[WOS]:19 TC[Scopus]:19 | Submit date:2019/04/08
Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon Journal article
ACS Applied Materials and Interfaces, 2014,Volume: 6,Issue: 19,Page: 16706-16711
Authors:  Ng K.W.;  Ko W.S.;  Chen R.;  Lu F.;  Tran T.-T.D.;  Li K.;  Chang-Hasnain C.J.
Favorite | View/Download:6/0 | TC[WOS]:6 TC[Scopus]:6 | Submit date:2019/04/08
alloy ordering  core-shell  III-V nanopillar  laser  nanowire  
Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon Journal article
Applied Physics Letters, 2014,Volume: 105,Issue: 11
Authors:  Tran T.-T.D.;  Chen R.;  Ng K.W.;  Ko W.S.;  Lu F.;  Chang-Hasnain C.J.
Favorite | View/Download:5/0 | TC[WOS]:9 TC[Scopus]:8 | Submit date:2019/04/08
Metastable growth of pure wurtzite InGaAs microstructures Journal article
Nano Letters, 2014,Volume: 14,Issue: 8,Page: 4757-4762
Authors:  Ng K.W.;  Ko W.S.;  Lu F.;  Chang-Hasnain C.J.
Favorite | View/Download:8/0 | TC[WOS]:13 TC[Scopus]:14 | Submit date:2019/04/08
core-shell  III-V  Nanowire  phase purity  wurtzite  
Nanophotonic integrated circuits from nanoresonators grown on silicon Journal article
Nature Communications, 2014,Volume: 5
Authors:  Chen R.;  Ng K.W.;  Ko W.S.;  Parekh D.;  Lu F.;  Tran T.-T.D.;  Li K.;  Chang-Hasnain C.
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The effect of inner surface roughness and heating on friction factor in horizontal mini-tubes Conference paper
Proceedings of the 15th International Heat Transfer Conference, IHTC 2014
Authors:  Tam L.M.;  Tam H.K.;  Ghajar A.J.;  Ng W.S.;  Wu C.K.
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Convection  Friction factor  Inner surface roughness  Mini-tube  Nano/Micro scale measurement and simulation  
InP nanowire avalanche photodiode and bipolar junction phototransistor integrated on silicon substrate Conference paper
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
Authors:  Ko W.S.;  Bhattacharya I.;  Tran T.;  Ng K.W.;  Chang-Hasnain C.
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Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy Journal article
ACS Nano, 2014,Volume: 8,Issue: 11,Page: 11440-11446
Authors:  Wang X.;  Zardo I.;  Spirkoska D.;  Yazji S.;  Ng K.W.;  Ko W.S.;  Chang-Hasnain C.J.;  Finley J.J.;  Abstreiter G.
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Band structure  InGaAs nanoneedle  Photoluminescence excitation spectroscopy  Raman spectroscopy  Wurtzite  
Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit Journal article
Nano Letters, 2013,Volume: 13,Issue: 12,Page: 5931-5937
Authors:  Ng K.W.;  Tran T.-T.D.;  Ko W.S.;  Chen R.;  Lu F.;  Chang-Hasnain C.J.
Favorite | View/Download:3/0 | TC[WOS]:14 TC[Scopus]:13 | Submit date:2019/04/08
GaAs nanopillar  GaAs nanowire  nanolaser  poly-Si  silicon  
Unconventional growth mechanism for monolithic integration of III-V on silicon Journal article
ACS Nano, 2013,Volume: 7,Issue: 1,Page: 100-107
Authors:  Ng K.W.;  Ko W.S.;  Tran T.-T.D.;  Chen R.;  Nazarenko M.V.;  Lu F.;  Dubrovskii V.G.;  Kamp M.;  Forchel A.;  Chang-Hasnain C.J.
Favorite | View/Download:6/0 | TC[WOS]:47 TC[Scopus]:51 | Submit date:2019/04/08
critical thickness  III-V on Si  laser  nanoneedle  nanopillar  nanowire  transmission electron microscopy