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High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO 2 Gate Dielectric Journal article
IEEE Transactions on Electron Devices, 2018,Volume: 65,Issue: 12,Page: 5337-5342
Authors:  Jiang H.;  Liu C.;  Ng K.W.;  Tang C.W.;  Lau K.M.
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gate dielectric  III-nitride  leakage  metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs)  power  ZrO 2  
Room-temperature inP/InGaAs nano-Ridge lasers grown on Si and emitting at telecom bands Journal article
Optica, 2018,Volume: 5,Issue: 8,Page: 918-923
Authors:  Han Y.;  Ng W.K.;  Ma C.;  Li Q.;  Zhu S.;  Chan C.C.S.;  Ng K.W.;  Lennon S.;  Taylor R.A.;  Wong K.S.;  Lau K.M.
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Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths Journal article
Optica, 2017,Volume: 4,Issue: 7,Page: 717-723
Authors:  Lu F.;  Bhattacharya I.;  Sun H.;  Tran T.-T.D.;  Ng K.W.;  Malheiros-Silveira G.N.;  Chang-Hasnain C.
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Integrated optics devices  Quantum-well, -wire and -dot devices  Semiconductor lasers  Subwavelength structures, nanostructures  Vertical emitting lasers  
Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths Journal article
ACS Photonics, 2017,Volume: 4,Issue: 3,Page: 695-702
Authors:  Deshpande S.;  Bhattacharya I.;  Malheiros-Silveira G.;  Ng K.W.;  Schuster F.;  Mantei W.;  Cook K.;  Chang-Hasnain C.
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III−V  InP  LEDs  MOCVD growth  nanowire laser  nanowire/nanopillar  photonic integrated circuit  quantum-well  silicon photonics  
An asymmetric supercapacitor with excellent cycling performance realized by hierarchical porous NiGa 2 O 4 nanosheets Journal article
Journal of Materials Chemistry A, 2017,Volume: 5,Issue: 36,Page: 19046-19053
Authors:  Liu S.;  Hui K.S.;  Hui K.N.;  Li H.-F.;  Ng K.W.;  Xu J.;  Tang Z.;  Jun S.C.
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An asymmetric supercapacitor with excellent cycling performance realized by hierarchical porous NiGa 2 O 4 nanosheets Journal article
Journal of Materials Chemistry A, 2017,Volume: 5,Issue: 36,Page: 19046-19053
Authors:  Liu S.;  Hui K.S.;  Hui K.N.;  Li H.-F.;  Ng K.W.;  Xu J.;  Tang Z.;  Jun S.C.
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An asymmetric supercapacitor with excellent cycling performance realized by hierarchical porous NiGa 2 O 4 nanosheets Journal article
Journal of Materials Chemistry A, 2017,Volume: 5,Issue: 36,Page: 19046-19053
Authors:  Liu S.;  Hui K.S.;  Hui K.N.;  Li H.-F.;  Ng K.W.;  Xu J.;  Tang Z.;  Jun S.C.
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An asymmetric supercapacitor with excellent cycling performance realized by hierarchical porous NiGa 2 O 4 nanosheets Journal article
Journal of Materials Chemistry A, 2017,Volume: 5,Issue: 36,Page: 19046-19053
Authors:  Liu S.;  Hui K.S.;  Hui K.N.;  Li H.-F.;  Ng K.W.;  Xu J.;  Tang Z.;  Jun S.C.
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Room-temperature InGaAs/InP quantum-well-in-nanopillar laser directly grown on silicon Conference paper
2016 Conference on Lasers and Electro-Optics, CLEO 2016
Authors:  Bhattacharya I.;  Lu F.;  Malheiros-Silveira G.N.;  Deshpande S.;  Ng K.W.;  Chang-Hasnain C.
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Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon Journal article
Scientific Reports, 2016,Volume: 6
Authors:  Ko W.S.;  Bhattacharya I.;  Tran T.-T.D.;  Ng K.W.;  Adair Gerke S.;  Chang-Hasnain C.
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