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High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric Journal article
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018,Volume: 65,Issue: 12,Page: 5337-5342
Authors:  Jiang, Huaxing;  Liu, Chao;  Ng, Kar Wei;  Tang, Chak Wah;  Lau, Kei May
Favorite  |  View/Download:0/0  |  Submit date:2019/01/17
III-nitride  gate dielectric  leakage  metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs)  power  ZrO2  
Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands Journal article
OPTICA, 2018,Volume: 5,Issue: 8,Page: 918-923
Authors:  Han, Yu;  Ng, Wai Kit;  Ma, Chao;  Li, Qiang;  Zhu, Si;  Chan, Christopher C. S.;  Ng, Kar Wei;  Lennon, Stephen;  Taylor, Robert A.;  Wong, Kam Sing;  Lau, Kei May
Favorite  |  View/Download:9/0  |  Submit date:2018/10/30
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands Journal article
NANOTECHNOLOGY, 2018,Volume: 29,Issue: 22
Authors:  Han, Yu;  Li, Qiang;  Ng, Kar Wei;  Zhu, Si;  Lau, Kei May
Favorite  |  View/Download:11/0  |  Submit date:2018/10/30
InP nano-ridges  III-V on Si  Si photonics  InGaAs quantum wires  
Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths Journal article
APPLIED PHYSICS LETTERS, 2017,Volume: 111,Issue: 21
Authors:  Han, Yu;  Li, Qiang;  Zhu, Si;  Ng, Kar Wei;  Lau, Kei May
Favorite  |  View/Download:10/0  |  Submit date:2018/10/30
An asymmetric supercapacitor with excellent cycling performance realized by hierarchical porous NiGa2O4 nanosheets Journal article
JOURNAL OF MATERIALS CHEMISTRY A, 2017,Volume: 5,Issue: 36,Page: 19046-19053
Authors:  Liu, Shude;  Hui, Kwan San;  Hui, Kwun Nam;  Li, Hai-Feng;  Ng, Kar Wei;  Xu, Jincheng;  Tang, Zikang;  Jun, Seong Chan
Favorite  |  View/Download:6/0  |  Submit date:2018/10/30