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Degenerate layer at ZnO/sapphire interface Journal article
Journal of Physics D: Applied Physics, 2009,Volume: 42,Issue: 19
Authors:  Li L.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.;  Yao B.;  Shen D.Z.;  Fan X.W.;  Lu Y.M.
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Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors Conference paper
Journal of the Korean Physical Society
Authors:  Wei Z.P.;  Yao B.;  Li Y.F.;  Shen D.Z.;  Lu Y.M.;  Zhang Z.Z.;  Li B.H.;  Zheng C.J.;  Wang X.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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N doping  P-MBE  ZnMgO/ZnO p-n junction  
Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire Conference paper
Journal of the Korean Physical Society
Authors:  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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Electroluminescence  LED  P-MBE  P-type ZnO  
Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content Journal article
Applied Physics Letters, 2007,Volume: 91,Issue: 23
Authors:  Li Y.F.;  Yao B.;  Lu Y.M.;  Wei Z.P.;  Gai Y.Q.;  Zheng C.J.;  Zhang Z.Z.;  Li B.H.;  Shen D.Z.;  Fan X.W.;  Tang Z.K.
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Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films Journal article
Journal of Materials Research, 2007,Volume: 22,Issue: 10,Page: 2791-2795
Authors:  Wei Z.P.;  Yao B.;  Wang X.H.;  Zhang Z.Z.;  Lu Y.M.;  Shen D.Z.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 373-377
Authors:  Lu Y.M.;  Wang X.;  Zhang Z.Z.;  Shen D.Z.;  Su S.C.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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A1. Atomic force microscopy  A1. Photoluminescence  A1. X-ray diffraction  A3. Molecular beam epitaxy  B1. Zinc oxide  
p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 362-365
Authors:  Zhang Z.Z.;  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Yao B.;  Li B.H.;  Zhao D.X.;  Zhang J.Y.;  Fan X.W.;  Tang Z.K.
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A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  B3. Light-emitting diodes  
Room temperature p-n ZnO blue-violet light-emitting diodes Journal article
Applied Physics Letters, 2007,Volume: 90,Issue: 4
Authors:  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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Electrical properties of N-doped ZnO grown on sapphire by P-MBE Journal article
Semiconductor Science and Technology, 2007,Volume: 22,Issue: 2,Page: 65-69
Authors:  Wang X.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Li B.H.;  Yao B.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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Formation of p-type MgZnO by nitrogen doping Journal article
Applied Physics Letters, 2006,Volume: 89,Issue: 10
Authors:  Wei Z.P.;  Yao B.;  Zhang Z.Z.;  Lu Y.M.;  Shen D.Z.;  Li B.H.;  Wang X.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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