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High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric Journal article
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018,Volume: 65,Issue: 12,Page: 5337-5342
Authors:  Jiang, Huaxing;  Liu, Chao;  Ng, Kar Wei;  Tang, Chak Wah;  Lau, Kei May
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III-nitride  gate dielectric  leakage  metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs)  power  ZrO2