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On the origin of intrinsic donors in ZnO Journal article
Applied Surface Science, 2010,Volume: 256,Issue: 11,Page: 3390-3393
Authors:  Sun F.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.;  Zhang Z.Z.;  Zhao D.X.;  Yao B.;  Shen D.Z.;  Fan X.W.
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Carrier concentration  Hall measurement  Intrinsic donors  Zinc oxide  
Degenerate layer at ZnO/sapphire interface Journal article
Journal of Physics D: Applied Physics, 2009,Volume: 42,Issue: 19
Authors:  Li L.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.;  Yao B.;  Shen D.Z.;  Fan X.W.;  Lu Y.M.
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A facile route to arsenic-doped p-type ZnO films Journal article
Journal of Crystal Growth, 2009,Volume: 311,Issue: 14,Page: 3577-3580
Authors:  Wang S.P.;  Shan C.X.;  Li B.H.;  Zhang J.Y.;  Yao B.;  Shen D.Z.;  Fan X.W.
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A1. Diffusion  A1. Doping  A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  
Electrical and optical properties of ZnO films grown by molecular beam epitaxy Journal article
Applied Surface Science, 2009,Volume: 255,Issue: 9,Page: 4913-4915
Authors:  Wang S.P.;  Shan C.X.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Shen D.Z.;  Fan X.W.
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Grain boundary  Hall mobility  Molecular beam epitaxy  Zinc oxide  
Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors Conference paper
Journal of the Korean Physical Society
Authors:  Wei Z.P.;  Yao B.;  Li Y.F.;  Shen D.Z.;  Lu Y.M.;  Zhang Z.Z.;  Li B.H.;  Zheng C.J.;  Wang X.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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N doping  P-MBE  ZnMgO/ZnO p-n junction  
Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire Conference paper
Journal of the Korean Physical Society
Authors:  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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Electroluminescence  LED  P-MBE  P-type ZnO  
Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content Journal article
Applied Physics Letters, 2007,Volume: 91,Issue: 23
Authors:  Li Y.F.;  Yao B.;  Lu Y.M.;  Wei Z.P.;  Gai Y.Q.;  Zheng C.J.;  Zhang Z.Z.;  Li B.H.;  Shen D.Z.;  Fan X.W.;  Tang Z.K.
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Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films Journal article
Journal of Materials Research, 2007,Volume: 22,Issue: 10,Page: 2791-2795
Authors:  Wei Z.P.;  Yao B.;  Wang X.H.;  Zhang Z.Z.;  Lu Y.M.;  Shen D.Z.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 373-377
Authors:  Lu Y.M.;  Wang X.;  Zhang Z.Z.;  Shen D.Z.;  Su S.C.;  Yao B.;  Li B.H.;  Zhang J.Y.;  Zhao D.X.;  Fan X.W.;  Tang Z.K.
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A1. Atomic force microscopy  A1. Photoluminescence  A1. X-ray diffraction  A3. Molecular beam epitaxy  B1. Zinc oxide  
p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 362-365
Authors:  Zhang Z.Z.;  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Yao B.;  Li B.H.;  Zhao D.X.;  Zhang J.Y.;  Fan X.W.;  Tang Z.K.
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A3. Molecular beam epitaxy  B2. Semiconducting II-VI materials  B3. Light-emitting diodes