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| On the origin of intrinsic donors in ZnO Journal article
Applied Surface Science, 2010,Volume: 256,Issue: 11,Page: 3390-3393
Authors: Sun F.; Shan C.X.; Wang S.P.; Li B.H.; Zhang J.Y.; Zhang Z.Z.; Zhao D.X.; Yao B.; Shen D.Z.; Fan X.W.
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Carrier concentration Hall measurement Intrinsic donors Zinc oxide |
| Degenerate layer at ZnO/sapphire interface Journal article
Journal of Physics D: Applied Physics, 2009,Volume: 42,Issue: 19
Authors: Li L.; Shan C.X.; Wang S.P.; Li B.H.; Zhang J.Y.; Yao B.; Shen D.Z.; Fan X.W.; Lu Y.M.
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| A facile route to arsenic-doped p-type ZnO films Journal article
Journal of Crystal Growth, 2009,Volume: 311,Issue: 14,Page: 3577-3580
Authors: Wang S.P.; Shan C.X.; Li B.H.; Zhang J.Y.; Yao B.; Shen D.Z.; Fan X.W.
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A1. Diffusion A1. Doping A3. Molecular beam epitaxy B2. Semiconducting II-VI materials |
| Electrical and optical properties of ZnO films grown by molecular beam epitaxy Journal article
Applied Surface Science, 2009,Volume: 255,Issue: 9,Page: 4913-4915
Authors: Wang S.P.; Shan C.X.; Yao B.; Li B.H.; Zhang J.Y.; Zhao D.X.; Shen D.Z.; Fan X.W.
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Grain boundary Hall mobility Molecular beam epitaxy Zinc oxide |
| Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors Conference paper
Journal of the Korean Physical Society
Authors: Wei Z.P.; Yao B.; Li Y.F.; Shen D.Z.; Lu Y.M.; Zhang Z.Z.; Li B.H.; Zheng C.J.; Wang X.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
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N doping P-MBE ZnMgO/ZnO p-n junction |
| Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire Conference paper
Journal of the Korean Physical Society
Authors: Wei Z.P.; Lu Y.M.; Shen D.Z.; Zhang Z.Z.; Yao B.; Li B.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
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Electroluminescence LED P-MBE P-type ZnO |
| Realization of p -type conduction in undoped MgxZn 1-xO thin films by controlling Mg content Journal article
Applied Physics Letters, 2007,Volume: 91,Issue: 23
Authors: Li Y.F.; Yao B.; Lu Y.M.; Wei Z.P.; Gai Y.Q.; Zheng C.J.; Zhang Z.Z.; Li B.H.; Shen D.Z.; Fan X.W.; Tang Z.K.
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| Photoluminescence and acceptor level state of p-type nitrogen-doped MgZnO films Journal article
Journal of Materials Research, 2007,Volume: 22,Issue: 10,Page: 2791-2795
Authors: Wei Z.P.; Yao B.; Wang X.H.; Zhang Z.Z.; Lu Y.M.; Shen D.Z.; Li B.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
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| Effects of low-temperature-grown ZnO buffer layer and Zn/O ratio on the properties of high-temperature-overgrown ZnO main layer on Si substrate by MBE Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 373-377
Authors: Lu Y.M.; Wang X.; Zhang Z.Z.; Shen D.Z.; Su S.C.; Yao B.; Li B.H.; Zhang J.Y.; Zhao D.X.; Fan X.W.; Tang Z.K.
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A1. Atomic force microscopy A1. Photoluminescence A1. X-ray diffraction A3. Molecular beam epitaxy B1. Zinc oxide |
| p-Type ZnO on sapphire by using O2-N2 co-activating and fabrication of ZnO LED Journal article
Journal of Crystal Growth, 2007,Volume: 301-302,Issue: SPEC. ISS.,Page: 362-365
Authors: Zhang Z.Z.; Wei Z.P.; Lu Y.M.; Shen D.Z.; Yao B.; Li B.H.; Zhao D.X.; Zhang J.Y.; Fan X.W.; Tang Z.K.
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A3. Molecular beam epitaxy B2. Semiconducting II-VI materials B3. Light-emitting diodes |
