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Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon Journal article
ACS Applied Materials and Interfaces, 2014,Volume: 6,Issue: 19,Page: 16706-16711
Authors:  Ng K.W.;  Ko W.S.;  Chen R.;  Lu F.;  Tran T.-T.D.;  Li K.;  Chang-Hasnain C.J.
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alloy ordering  core-shell  III-V nanopillar  laser  nanowire  
Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon Journal article
Applied Physics Letters, 2014,Volume: 105,Issue: 11
Authors:  Tran T.-T.D.;  Chen R.;  Ng K.W.;  Ko W.S.;  Lu F.;  Chang-Hasnain C.J.
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Metastable growth of pure wurtzite InGaAs microstructures Journal article
Nano Letters, 2014,Volume: 14,Issue: 8,Page: 4757-4762
Authors:  Ng K.W.;  Ko W.S.;  Lu F.;  Chang-Hasnain C.J.
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core-shell  III-V  Nanowire  phase purity  wurtzite  
Nanopillar lasers directly grown on silicon with heterostructure surface passivation Journal article
ACS Nano, 2014,Volume: 8,Issue: 7,Page: 6833-6839
Authors:  Sun H.;  Ren F.;  Ng K.W.;  Tran T.-T.D.;  Li K.;  Chang-Hasnain C.J.
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core-shell  III-V compound on Si  lasers  nanopillars  nanowires  surface passivation  
High brightness InP micropillars grown on silicon with fermi level splitting larger than 1 eV Journal article
Nano Letters, 2014,Volume: 14,Issue: 6,Page: 3235-3240
Authors:  Tran T.-T.D.;  Sun H.;  Ng K.W.;  Ren F.;  Li K.;  Lu F.;  Yablonovitch E.;  Chang-Hasnain C.J.
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III-V on Si  Micropillars  nanowires  photoluminescence  photovoltaics  solar cells  
Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon Journal article
Nano Letters, 2014,Volume: 14,Issue: 1,Page: 183-190
Authors:  Li K.;  Sun H.;  Ren F.;  Ng K.W.;  Tran T.-T.D.;  Chen R.;  Chang-Hasnain C.J.
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InP nanowire  nanolaser  photovoltaics  silicon  type-II  wurtzite  
Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy Journal article
ACS Nano, 2014,Volume: 8,Issue: 11,Page: 11440-11446
Authors:  Wang X.;  Zardo I.;  Spirkoska D.;  Yazji S.;  Ng K.W.;  Ko W.S.;  Chang-Hasnain C.J.;  Finley J.J.;  Abstreiter G.
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Band structure  InGaAs nanoneedle  Photoluminescence excitation spectroscopy  Raman spectroscopy  Wurtzite  
Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit Journal article
Nano Letters, 2013,Volume: 13,Issue: 12,Page: 5931-5937
Authors:  Ng K.W.;  Tran T.-T.D.;  Ko W.S.;  Chen R.;  Lu F.;  Chang-Hasnain C.J.
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GaAs nanopillar  GaAs nanowire  nanolaser  poly-Si  silicon  
High quality InGaP micropillars directly grown on silicon Conference paper
2013 IEEE Photonics Society Summer Topical Meeting Series, PSSTMS 2013
Authors:  Sun H.;  Ren F.;  Tran T.;  Ng K.W.;  Li K.;  Chang-Hasnain C.J.
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Unconventional growth mechanism for monolithic integration of III-V on silicon Journal article
ACS Nano, 2013,Volume: 7,Issue: 1,Page: 100-107
Authors:  Ng K.W.;  Ko W.S.;  Tran T.-T.D.;  Chen R.;  Nazarenko M.V.;  Lu F.;  Dubrovskii V.G.;  Kamp M.;  Forchel A.;  Chang-Hasnain C.J.
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critical thickness  III-V on Si  laser  nanoneedle  nanopillar  nanowire  transmission electron microscopy