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Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 1,Page: 43-51
作者:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.;  Kuo H.C.;  Turnbull D.;  Lin C.H.;  Li J.;  Hsieh K.C.;  Chuang S.L.;  Adesida I.;  Feng M.;  Bishop S.G.;  Stillman G.E.;  Gibson J.M.;  Chen H.;  Mazumder J.;  Liu H.C.
收藏  |  浏览/下载:0/0  |  提交时间:2019/04/08
Dark current characteristics  Multiple quantum well infrared photodectors (QWIPs)  Quantum efficiency  Rapid thermal annealing (RTA)  Red shift  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Journal of Electronic Materials, 1997,Volume: 26,Issue: 1,Page: 43-51
作者:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.;  Kuo H.C.;  Turnbull D.;  Lin C.H.;  Li J.;  Hsieh K.C.;  Chuang S.L.;  Adesida I.;  Feng M.;  Bishop S.G.;  Stillman G.E.;  Gibson J.M.;  Chen H.;  Mazumder J.;  Liu H.C.
收藏  |  浏览/下载:1/0  |  提交时间:2019/04/08
Dark current characteristics  Multiple quantum well infrared photodectors (QWIPs)  Quantum efficiency  Rapid thermal annealing (RTA)  Red shift