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High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors Conference paper
Technical Digest - International Electron Devices Meeting, IEDM
Authors:  Huo X.;  Zhang M.;  Chan P.C.H.;  Liang Q.;  Tang Z.K.
Favorite | View/Download:2/0 | TC[WOS]:0 TC[Scopus]:0 | Submit date:2019/04/08
High frequency characterization for the single-walled carbon nanorubes using S-parameter Conference paper
2004 4th IEEE Conference on Nanotechnology
Authors:  Zhang M.;  Huo X.;  Liang Q.;  Tang Z.K.;  Chan P.C.H.
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Carbon Nanotube  High frequency  Nanotechnology  Semiconductor devices