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Controllable growth of high quality ZnO thin film on C-sapphire Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2015,Volume: 36,Issue: 10,Page: 1171-1177
Authors:  Zhang Q.-L.;  Su L.-X.;  Wu T.-Z.;  Wang Y.-C.;  Zhu Y.;  Chen M.-M.;  Gui X.-C.;  Tang Z.-K.
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Buffer  Defects  High quality thin film  Stress  ZnO  
Controlled growth of pure cubic Mg 0.3 Zn 0.7 O thin films on c-plane sapphire by introducing graded buffer layer Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 9,Page: 1040-1045
Authors:  Zheng J.;  Zhang Z.-Z.;  Wang L.-K.;  Han S.;  Zhang J.-Y.;  Liu Y.-C.;  Wang S.-P.;  Jiang M.-M.;  Li B.-H.;  Zhao D.-X.;  Liu L.;  Liu K.-W.;  Shan C.-X.;  Shen D.-Z.
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Bandgap modulation  Buffer layer  Cubic MgZnO  
Cubic MgZnO deep-ultraviolet photodetector with high responsivity Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 11,Page: 1291-1296
Authors:  Zheng J.;  Qiao Q.;  Zhang Z.-Z.;  Wang L.-K.;  Han S.;  Zhang J.-Y.;  Liu Y.-C.;  Wang S.-P.;  Chen X.;  Jiang M.-M.;  Li B.-H.;  Zhao D.-X.;  Liu L.;  Liu K.-W.;  Shan C.-X.;  Shen D.-Z.
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Cubic MgZnO  Deep-ultraviolet photodetector  Photoconductive gain  
Epitaxial (110)-oriented cubic MgZnO films on m-plane sapphire for solar-blind UV photodetectors Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 6,Page: 678-683
Authors:  Zheng J.;  Zhang Z.-Z.;  Zhang J.-Y.;  Liu Y.-C.;  Wang S.-P.;  Jiang M.-M.;  Chen X.;  Li B.-H.;  Zhao D.-X.;  Liu L.;  Wang L.-K.;  Shan C.-X.;  Shen D.-Z.
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(110)-oriented  Cubic MgZnO  MOCVD  Solar-blind UV photodetectors  
Smooth surface morphology of ZnO thin films on sapphire at low temperature Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 5,Page: 542-547
Authors:  Zhao P.-C.;  Zhang Z.-Z.;  Yao B.;  Li B.-H.;  Wang S.-P.;  Jiang M.-M.;  Zhao D.-X.;  Shan C.-X.;  Zhao H.-F.;  Liu L.;  Shen D.-Z.
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Growth temperature  Molecular beam epitaxy  Smooth growth  ZnO  
Effect of boron on nitrogen doped p-type ZnO thin films Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 7,Page: 795-799
Authors:  Zhao P.-C.;  Zhang Z.-Z.;  Yao B.;  Li B.-H.;  Wang S.-P.;  Jiang M.-M.;  Zhao D.-X.;  Shan C.-X.;  Liu L.;  Shen D.-Z.
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B/N codoped  Stable p-type conduction  ZnO  
p-type doping of ZnO:N thin fims by alternating the growth atmosphere Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2014,Volume: 35,Issue: 4,Page: 399-403
Authors:  Zhao P.-C.;  Zhang Z.-Z.;  Yao B.;  Li B.-H.;  Wang S.-P.;  Jiang M.-M.;  Zhao D.-X.;  Shan C.-X.;  Liu L.;  Shen D.-Z.
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Oxygen supplementation  P-type  ZnO  
Comparative study of polar and non-polar BeZnO films grown by plasma-assisted molecular beam epitaxy Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2013,Volume: 34,Issue: 11,Page: 1483-1488
Authors:  Wang Y.-C.;  Wu T.-Z.;  Chen M.-M.;  Su L.-X.;  Zhang Q.-L.;  Tang Z.-K.
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BeZnO  Crystal orientation  Molecular beam epitaxy  Photoluminescence  Sapphire  
Electrical properties of ZnO thin films growth under different conditions Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2013,Volume: 34,Issue: 11,Page: 1430-1434
Authors:  Zhao P.-C.;  Zhang Z.-Z.;  Yao B.;  Li B.-H.;  Wang S.-P.;  Jiang M.-M.;  Zhao D.-X.;  Shan C.-X.;  Liu L.;  Shen D.-Z.
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Chamber vacuum  High electron concentration  Hydrogen  ZnO  
Study of MgZnO semiconductor materials using photoluminescence and resonance Raman spectroscopy Journal article
Faguang Xuebao/Chinese Journal of Luminescence, 2013,Volume: 34,Issue: 9,Page: 1149-1154
Authors:  Wang Y.-C.;  Wu T.-Z.;  Zhang Q.-L.;  Chen M.-M.;  Su L.-X.;  Tang Z.-K.
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MgxZn1-xO  P-MBE  Photoluminescence  Resonance Raman spectroscopy  X-ray diffraction